Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer

Pramila Mahala; Amit K. Goyal; Sumitra Singh; Suchandan Pal

doi:10.1007/978-981-13-2553-3_55

Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer

Pramila Mahala^*
, Amit K. Goyal
, Sumitra Singh
, Suchandan Pal

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm².

Original language	English
Title of host publication	Advances in Signal Processing and Communication - Select Proceedings of ICSC 2018
Editors	Sanjeev Manhas, Banmali S. Rawat, Aditya Trivedi, Vikram Karwal
Publisher	Springer Verlag
Pages	565-571
Number of pages	7
ISBN (Print)	9789811325526
DOIs	https://doi.org/10.1007/978-981-13-2553-3_55
Publication status	Published - 2019
Event	International Conference on Signal Processing and Communication, ICSC 2018 - Noida, India Duration: 21-03-2018 → 23-03-2018

Publication series

Name	Lecture Notes in Electrical Engineering
Volume	526
ISSN (Print)	1876-1100
ISSN (Electronic)	1876-1119

Conference

Conference	International Conference on Signal Processing and Communication, ICSC 2018
Country/Territory	India
City	Noida
Period	21-03-18 → 23-03-18

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering

Access to Document

10.1007/978-981-13-2553-3_55

Cite this

Mahala, P., Goyal, A. K., Singh, S., & Pal, S. (2019). Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer. In S. Manhas, B. S. Rawat, A. Trivedi, & V. Karwal (Eds.), Advances in Signal Processing and Communication - Select Proceedings of ICSC 2018 (pp. 565-571). (Lecture Notes in Electrical Engineering; Vol. 526). Springer Verlag. https://doi.org/10.1007/978-981-13-2553-3_55

Mahala, Pramila ; Goyal, Amit K. ; Singh, Sumitra et al. / Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer. Advances in Signal Processing and Communication - Select Proceedings of ICSC 2018. editor / Sanjeev Manhas ; Banmali S. Rawat ; Aditya Trivedi ; Vikram Karwal. Springer Verlag, 2019. pp. 565-571 (Lecture Notes in Electrical Engineering).

@inproceedings{fa2c70a2baa6440792b8639cbee4ce80,

title = "Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer",

abstract = "An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71\% with nongraded EBL LEDs to 30.92\% at a high injection current of 1000 A/cm2.",

author = "Pramila Mahala and Goyal, \{Amit K.\} and Sumitra Singh and Suchandan Pal",

note = "Publisher Copyright: {\textcopyright} Springer Nature Singapore Pte Ltd. 2019.; International Conference on Signal Processing and Communication, ICSC 2018 ; Conference date: 21-03-2018 Through 23-03-2018",

year = "2019",

doi = "10.1007/978-981-13-2553-3\_55",

language = "English",

isbn = "9789811325526",

series = "Lecture Notes in Electrical Engineering",

publisher = "Springer Verlag",

pages = "565--571",

editor = "Sanjeev Manhas and Rawat, \{Banmali S.\} and Aditya Trivedi and Vikram Karwal",

booktitle = "Advances in Signal Processing and Communication - Select Proceedings of ICSC 2018",

address = "Germany",

}

Mahala, P, Goyal, AK, Singh, S & Pal, S 2019, Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer. in S Manhas, BS Rawat, A Trivedi & V Karwal (eds), Advances in Signal Processing and Communication - Select Proceedings of ICSC 2018. Lecture Notes in Electrical Engineering, vol. 526, Springer Verlag, pp. 565-571, International Conference on Signal Processing and Communication, ICSC 2018, Noida, India, 21-03-18. https://doi.org/10.1007/978-981-13-2553-3_55

Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer. / Mahala, Pramila; Goyal, Amit K.; Singh, Sumitra et al.
Advances in Signal Processing and Communication - Select Proceedings of ICSC 2018. ed. / Sanjeev Manhas; Banmali S. Rawat; Aditya Trivedi; Vikram Karwal. Springer Verlag, 2019. p. 565-571 (Lecture Notes in Electrical Engineering; Vol. 526).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer

AU - Mahala, Pramila

AU - Goyal, Amit K.

AU - Singh, Sumitra

AU - Pal, Suchandan

N1 - Publisher Copyright: © Springer Nature Singapore Pte Ltd. 2019.

PY - 2019

Y1 - 2019

N2 - An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.

AB - An InGaN/GaN light-emitting diode (LED) consisting of special Si-doped barrier profile and graded-composition electron blocking layer (EBL) with varying Al composition was designed and simulated. The simulation results show that EBL can enhance the hole injection and electron confinement compared to nongraded EBL. Consequently, the LED with a special Si-doped barrier profile and graded EBL shows improved electrical and optical properties compared to LED with a special Si-doped barrier profile alone. In addition, the efficiency droop is reduced from 56.71% with nongraded EBL LEDs to 30.92% at a high injection current of 1000 A/cm2.

UR - https://www.scopus.com/pages/publications/85057832123

UR - https://www.scopus.com/pages/publications/85057832123#tab=citedBy

U2 - 10.1007/978-981-13-2553-3_55

DO - 10.1007/978-981-13-2553-3_55

M3 - Conference contribution

AN - SCOPUS:85057832123

SN - 9789811325526

T3 - Lecture Notes in Electrical Engineering

SP - 565

EP - 571

BT - Advances in Signal Processing and Communication - Select Proceedings of ICSC 2018

A2 - Manhas, Sanjeev

A2 - Rawat, Banmali S.

A2 - Trivedi, Aditya

A2 - Karwal, Vikram

PB - Springer Verlag

T2 - International Conference on Signal Processing and Communication, ICSC 2018

Y2 - 21 March 2018 through 23 March 2018

ER -

Mahala P, Goyal AK, Singh S, Pal S. Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer. In Manhas S, Rawat BS, Trivedi A, Karwal V, editors, Advances in Signal Processing and Communication - Select Proceedings of ICSC 2018. Springer Verlag. 2019. p. 565-571. (Lecture Notes in Electrical Engineering). doi: 10.1007/978-981-13-2553-3_55

Reducing efficiency droop for si-doped barrier model of GaN/InGaN multi-quantum well light-emitting diode by designing electron blocking layer

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