Resistive switching mechanisms of high-κ Gd2O3 films in a Cu (IrOx)/Gd2O3/W structure

Atanu Das; S. Maikap; L. B. Chang

doi:10.1109/ISDRS.2009.5378130

Resistive switching mechanisms of high-κ Gd₂O₃ films in a Cu (IrO_x)/Gd₂O₃/W structure

Atanu Das
, S. Maikap^*
, L. B. Chang

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378130
Publication status	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 09-12-2009 → 11-12-2009

Publication series

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	09-12-09 → 11-12-09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/ISDRS.2009.5378130

Cite this

@inproceedings{43dccd9078ef464fa1bf6ef218aaf2d4,

title = "Resistive switching mechanisms of high-κ Gd2O3 films in a Cu (IrOx)/Gd2O3/W structure",

author = "Atanu Das and S. Maikap and Chang, \{L. B.\}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378130",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Das, A, Maikap, S & Chang, LB 2009, Resistive switching mechanisms of high-κ Gd₂O₃ films in a Cu (IrO_x)/Gd₂O₃/W structure. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378130, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 09-12-09. https://doi.org/10.1109/ISDRS.2009.5378130

Resistive switching mechanisms of high-κ Gd₂O₃ films in a Cu (IrO_x)/Gd₂O₃/W structure. / Das, Atanu; Maikap, S.; Chang, L. B.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378130 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Resistive switching mechanisms of high-κ Gd2O3 films in a Cu (IrOx)/Gd2O3/W structure

AU - Das, Atanu

AU - Maikap, S.

AU - Chang, L. B.

PY - 2009

Y1 - 2009

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U2 - 10.1109/ISDRS.2009.5378130

DO - 10.1109/ISDRS.2009.5378130

M3 - Conference contribution

AN - SCOPUS:77949399359

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -