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Resonant tunneling GaAs/AlGaAs quantum well structures for p-i-n photovoltaic cells

  • K. K. Nagaraja
  • , M. P. Telenkov
  • , I. P. Kazakov
  • , S. A. Savinov
  • , Yu A. Mityagin*
  • *Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    This study is devoted to the development of resonant-tunneling structures of quantum wells implementing resonant matching of lower subbands of size quantization in an electric field of the p-i-n junction of photovoltaic elements. The method for controlling the lower subband position in quantum wells by introducing a series of the tunnel-transparent barriers into a quantum well is proposed. The possibility of varying the level position in deep quantum wells in a wide range up to the continuous spectrum is demonstrated on a grown model structure; in this case, agreement between calculated and experimental subband positions is achieved.

    Original languageEnglish
    Pages (from-to)72-76
    Number of pages5
    JournalBulletin of the Lebedev Physics Institute
    Volume44
    Issue number3
    DOIs
    Publication statusPublished - 01-03-2017

    UN SDGs

    This output contributes to the following UN Sustainable Development Goals (SDGs)

    1. SDG 7 - Affordable and Clean Energy
      SDG 7 Affordable and Clean Energy

    All Science Journal Classification (ASJC) codes

    • General Physics and Astronomy

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