TY - GEN
T1 - Revealing the Noise Dependent Sensitivity of a Junctionless FinFET-Based Hydrogen Sensor with Ferroelectric Gate Stack
AU - Gandhi, Navneet
AU - Rathore, Sunil
AU - Jaisawal, Rajeewa Kumar
AU - Kondekar, P. N.
AU - Kumar, Naveen
AU - Dixit, Ankit
AU - Georgiev, Vihar
AU - Bagga, Navjeet
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024
Y1 - 2024
N2 - This paper reveals the role of Flicker (1/f) Noise and process variations (i.e., random dopant fluctuation, RDF) on the sensitivity of the Junctionless FinFET-based hydrogen gas (H2) sensor with a ferroelectric (FE) gate stack, which offers the privilege of Negative Capacitance (NC) effect. In general, the FE-stack has two possible configurations, i.e., MFMIS and MFIS. Therefore, the sustainability and selectivity of both configurations under the influence of Noise on the sensor's sensitivity have been thoroughly investigated using well-calibrated TCAD models. With varying H2 concentrations (in ppm) and FE thicknesses in both configurations, the acquired electrical characteristics, sensing metrics, and noise spectral density (SIDS) reveal that the MFMIS is an appropriate choice for realizing a FET -based sensor.
AB - This paper reveals the role of Flicker (1/f) Noise and process variations (i.e., random dopant fluctuation, RDF) on the sensitivity of the Junctionless FinFET-based hydrogen gas (H2) sensor with a ferroelectric (FE) gate stack, which offers the privilege of Negative Capacitance (NC) effect. In general, the FE-stack has two possible configurations, i.e., MFMIS and MFIS. Therefore, the sustainability and selectivity of both configurations under the influence of Noise on the sensor's sensitivity have been thoroughly investigated using well-calibrated TCAD models. With varying H2 concentrations (in ppm) and FE thicknesses in both configurations, the acquired electrical characteristics, sensing metrics, and noise spectral density (SIDS) reveal that the MFMIS is an appropriate choice for realizing a FET -based sensor.
UR - https://www.scopus.com/pages/publications/85210104041
UR - https://www.scopus.com/pages/publications/85210104041#tab=citedBy
U2 - 10.1109/SISPAD62626.2024.10733257
DO - 10.1109/SISPAD62626.2024.10733257
M3 - Conference contribution
AN - SCOPUS:85210104041
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
BT - 2024 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2024 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2024
Y2 - 25 September 2024 through 27 September 2024
ER -