RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters *

Ajay Kumar; Neha Gupta; Amit K. Goyal; Yehia Massoud

doi:10.1109/5NANO53044.2022.9828977

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters ^*

Ajay Kumar
, Neha Gupta
, Amit K. Goyal
, Yehia Massoud

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

Original language	English
Title of host publication	2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665437288
DOIs	https://doi.org/10.1109/5NANO53044.2022.9828977
Publication status	Published - 2022
Event	2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022 - Kottayam, India Duration: 28-04-0200 → 29-04-0200

Publication series

Name	2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022

Conference

Conference	2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022
Country/Territory	India
City	Kottayam
Period	28-04-00 → 29-04-00

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Materials Science (miscellaneous)
Instrumentation
Atomic and Molecular Physics, and Optics
Biotechnology

Access to Document

10.1109/5NANO53044.2022.9828977

Cite this

Kumar, A., Gupta, N., Goyal, A. K., & Massoud, Y. (2022). RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters ^*. In 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022 (2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/5NANO53044.2022.9828977

Kumar, Ajay ; Gupta, Neha ; Goyal, Amit K. et al. / RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters ^*. 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022).

@inproceedings{8e75eb8539ca4e609927b03df9166684,

title = "RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters *",

abstract = "In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8\% and 94.6\% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.",

author = "Ajay Kumar and Neha Gupta and Goyal, \{Amit K.\} and Yehia Massoud",

note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022 ; Conference date: 28-04-0200 Through 29-04-0200",

year = "2022",

doi = "10.1109/5NANO53044.2022.9828977",

language = "English",

series = "2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022",

address = "United States",

}

Kumar, A, Gupta, N, Goyal, AK & Massoud, Y 2022, RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters ^*. in 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022. 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022, Institute of Electrical and Electronics Engineers Inc., 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022, Kottayam, India, 28-04-00. https://doi.org/10.1109/5NANO53044.2022.9828977

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters ^*. / Kumar, Ajay; Gupta, Neha; Goyal, Amit K. et al.
2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022. Institute of Electrical and Electronics Engineers Inc., 2022. (2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters *

AU - Kumar, Ajay

AU - Gupta, Neha

AU - Goyal, Amit K.

AU - Massoud, Yehia

PY - 2022

Y1 - 2022

N2 - In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

AB - In this work, we have presented, a radio frequency (RF) assessment of nanoscale gallium nitride-silicon-on-insulator fin field-effect transistor (GaN-SOI-FinFET). All the performances of the device have been compared with conventional FinFET (Conv. FinFET) simultaneously. All the results show that the power gains have significantly improved in terms of Gma, Gms, stern stability factor (SS), GMT, and intrinsic delay in comparison to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for high-performance RF applications.

UR - https://www.scopus.com/pages/publications/85135876835

UR - https://www.scopus.com/pages/publications/85135876835#tab=citedBy

U2 - 10.1109/5NANO53044.2022.9828977

DO - 10.1109/5NANO53044.2022.9828977

M3 - Conference contribution

AN - SCOPUS:85135876835

T3 - 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022

BT - 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022

Y2 - 28 April 0200 through 29 April 0200

ER -

Kumar A, Gupta N, Goyal AK, Massoud Y. RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters ^*. In 2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022. Institute of Electrical and Electronics Engineers Inc. 2022. (2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience and Nanotechnology, 5NANO 2022). doi: 10.1109/5NANO53044.2022.9828977