Robust room temperature ferromagnetism in epitaxial CoO thin film

D. S. Negi; B. Loukya; K. Dileep; R. Sahu; K. K. Nagaraja; N. Kumar; R. Datta

doi:10.1063/1.4847775

Robust room temperature ferromagnetism in epitaxial CoO thin film

D. S. Negi, B. Loukya, K. Dileep, R. Sahu, K. K. Nagaraja, N. Kumar, R. Datta^*

^*Corresponding author for this work

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Co vacancy (V_Co) induced robust room temperature ferromagnetism (Ms ∼ 60 emu/cm³ and coercivity ∼ 603 Oe) is experimentally realized in rock-salt CoO epitaxial thin film (∼110 nm) grown by pulsed laser deposition. Co charge state is found to be higher ∼+3.2 (from Co L₃/L₂ white line ratio) and this is due to the V _Co induced charge transfer from the neighboring Co-3d to O-2p states in order to compensate for the hole formation. O-K and cathodoluminescence spectra corroborate the existence of V_Co and higher charge state. Temperature dependent magnetization and exchange bias experiments confirm the coexistence of ferromagnetic and antiferromagnetic phases.

Original language	English
Article number	242407
Journal	Applied Physics Letters
Volume	103
Issue number	24
DOIs	https://doi.org/10.1063/1.4847775
Publication status	Published - 09-12-2013

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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abstract = "Co vacancy (VCo) induced robust room temperature ferromagnetism (Ms ∼ 60 emu/cm3 and coercivity ∼ 603 Oe) is experimentally realized in rock-salt CoO epitaxial thin film (∼110 nm) grown by pulsed laser deposition. Co charge state is found to be higher ∼+3.2 (from Co L3/L2 white line ratio) and this is due to the V Co induced charge transfer from the neighboring Co-3d to O-2p states in order to compensate for the hole formation. O-K and cathodoluminescence spectra corroborate the existence of VCo and higher charge state. Temperature dependent magnetization and exchange bias experiments confirm the coexistence of ferromagnetic and antiferromagnetic phases.",

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AU - Negi, D. S.

AU - Loukya, B.

AU - Dileep, K.

AU - Sahu, R.

AU - Nagaraja, K. K.

AU - Kumar, N.

AU - Datta, R.

PY - 2013/12/9

Y1 - 2013/12/9

N2 - Co vacancy (VCo) induced robust room temperature ferromagnetism (Ms ∼ 60 emu/cm3 and coercivity ∼ 603 Oe) is experimentally realized in rock-salt CoO epitaxial thin film (∼110 nm) grown by pulsed laser deposition. Co charge state is found to be higher ∼+3.2 (from Co L3/L2 white line ratio) and this is due to the V Co induced charge transfer from the neighboring Co-3d to O-2p states in order to compensate for the hole formation. O-K and cathodoluminescence spectra corroborate the existence of VCo and higher charge state. Temperature dependent magnetization and exchange bias experiments confirm the coexistence of ferromagnetic and antiferromagnetic phases.

AB - Co vacancy (VCo) induced robust room temperature ferromagnetism (Ms ∼ 60 emu/cm3 and coercivity ∼ 603 Oe) is experimentally realized in rock-salt CoO epitaxial thin film (∼110 nm) grown by pulsed laser deposition. Co charge state is found to be higher ∼+3.2 (from Co L3/L2 white line ratio) and this is due to the V Co induced charge transfer from the neighboring Co-3d to O-2p states in order to compensate for the hole formation. O-K and cathodoluminescence spectra corroborate the existence of VCo and higher charge state. Temperature dependent magnetization and exchange bias experiments confirm the coexistence of ferromagnetic and antiferromagnetic phases.

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Robust room temperature ferromagnetism in epitaxial CoO thin film

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