TY - JOUR
T1 - Room-Temperature Magneto-dielectric Effect in LaGa0.7Fe0.3O3+γ; Origin and Impact of Excess Oxygen
AU - Rai, Hari Mohan
AU - Singh, Preetam
AU - Saxena, Shailendra K.
AU - Mishra, Vikash
AU - Warshi, M. Kamal
AU - Kumar, Rajesh
AU - Rajput, Parasmani
AU - Sagdeo, Archna
AU - Choudhuri, Indrani
AU - Pathak, Biswarup
AU - Sagdeo, Pankaj R.
N1 - Publisher Copyright:
© 2017 American Chemical Society.
PY - 2017/4/3
Y1 - 2017/4/3
N2 - We report an observation of room-temperature magneto-dielectric (RTMD) effect in LaGa0.7Fe0.3O3+γ compound. The contribution of intrinsic/resistive sources in the presently observed RTMD effect was analyzed by measuring direct-current (dc) magnetoresistance (MR) in four-probe geometry and frequency-dependent MR via impedance spectroscopy (MRIS). Present MRIS analysis reveals that at frequencies corresponding to grain contribution (≥1 × 106 Hz for present sample), the observed MD phenomenon is MR-free/intrinsic, whereas at lower probing frequencies (<1 × 106 Hz), the observed MD coupling appears to be MR-dominated possibly due to oxygen excess, that is, due to coexistence of Fe3+ and Fe4+. The magnetostriction is anticipated as a mechanism responsible for MR-free/intrinsic MD coupling, whereas the MR-dominated part is attributed to hopping charge transport along with Maxwell-Wagner and space charge polarization. The multivalence of Fe ions in LaGa0.7Fe0.3O3+γ was validated through iodometric titration and Fe K-edge X-ray absorption near-edge structure measurements. The excess of oxygen, that is, coexistence of Fe3+ and Fe4+, was understood in terms of stability of Fe4+ by means of "bond-valence-sum" analysis and density functional theory-based first-principles calculations. The cation vacancies at La/Ga site (or at La and Ga both) were proposed as the possible origin of excess oxygen in presently studied compound. Present investigation suggests that, to justify the intrinsic/resistive origin of MD phenomenon, frequency-dependent MR measurements are more useful than measuring only dc MR or comparing the trends of magnetic-field-dependent change in dielectric constant and tan δ. Presently studied Fe-doped LaGaO3 can be a candidate for RTMD applications.
AB - We report an observation of room-temperature magneto-dielectric (RTMD) effect in LaGa0.7Fe0.3O3+γ compound. The contribution of intrinsic/resistive sources in the presently observed RTMD effect was analyzed by measuring direct-current (dc) magnetoresistance (MR) in four-probe geometry and frequency-dependent MR via impedance spectroscopy (MRIS). Present MRIS analysis reveals that at frequencies corresponding to grain contribution (≥1 × 106 Hz for present sample), the observed MD phenomenon is MR-free/intrinsic, whereas at lower probing frequencies (<1 × 106 Hz), the observed MD coupling appears to be MR-dominated possibly due to oxygen excess, that is, due to coexistence of Fe3+ and Fe4+. The magnetostriction is anticipated as a mechanism responsible for MR-free/intrinsic MD coupling, whereas the MR-dominated part is attributed to hopping charge transport along with Maxwell-Wagner and space charge polarization. The multivalence of Fe ions in LaGa0.7Fe0.3O3+γ was validated through iodometric titration and Fe K-edge X-ray absorption near-edge structure measurements. The excess of oxygen, that is, coexistence of Fe3+ and Fe4+, was understood in terms of stability of Fe4+ by means of "bond-valence-sum" analysis and density functional theory-based first-principles calculations. The cation vacancies at La/Ga site (or at La and Ga both) were proposed as the possible origin of excess oxygen in presently studied compound. Present investigation suggests that, to justify the intrinsic/resistive origin of MD phenomenon, frequency-dependent MR measurements are more useful than measuring only dc MR or comparing the trends of magnetic-field-dependent change in dielectric constant and tan δ. Presently studied Fe-doped LaGaO3 can be a candidate for RTMD applications.
UR - https://www.scopus.com/pages/publications/85016977767
UR - https://www.scopus.com/inward/citedby.url?scp=85016977767&partnerID=8YFLogxK
U2 - 10.1021/acs.inorgchem.6b02507
DO - 10.1021/acs.inorgchem.6b02507
M3 - Article
C2 - 28306265
AN - SCOPUS:85016977767
SN - 0020-1669
VL - 56
SP - 3809
EP - 3819
JO - Inorganic Chemistry
JF - Inorganic Chemistry
IS - 7
ER -