Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET

Rajeewa Kumar Jaisawal; Sunil Rathore; Navneet Gandhi; P. N. Kondekar; Shashank Banchhor; V. Bharath Sreenivas; Young Suh Song; Navjeet Bagga

doi:10.1109/EDTM55494.2023.10103127

Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET

Rajeewa Kumar Jaisawal
, Sunil Rathore
, Navneet Gandhi
, P. N. Kondekar
, Shashank Banchhor
, V. Bharath Sreenivas
, Young Suh Song
, Navjeet Bagga

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

21 Citations (Scopus)

Abstract

The realization of a Negative Capacitance (NC) phenomenon in TCAD, considering several realistic aspects of transport physics, remains challenging. In this paper, we investigated the aging and reliability of the NC-FinFET considering the self-heating effect (SHE) and interface trap charges with varying concentration and energy location. In general, the FEPolarization and hydrodynamic models cannot be coupled at the same simulation flow; thus, we employed the iterative approach. Due to SHE, the lattice temperature increases, which impacts the Landau parameters and, in turn, the NC behavior. Moreover, we also evaluated the impact of ambient temperature on device performance with and without (w/o) considering SHE.

Original language	English
Title of host publication	7th IEEE Electron Devices Technology and Manufacturing Conference
Subtitle of host publication	Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9798350332520
DOIs	https://doi.org/10.1109/EDTM55494.2023.10103127
Publication status	Published - 2023
Event	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 - Seoul, Korea, Republic of Duration: 07-03-2023 → 10-03-2023

Publication series

Name	7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

Conference

Conference	7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023
Country/Territory	Korea, Republic of
City	Seoul
Period	07-03-23 → 10-03-23

All Science Journal Classification (ASJC) codes

Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials
Instrumentation
Electrical and Electronic Engineering

Access to Document

10.1109/EDTM55494.2023.10103127

Cite this

Jaisawal, R. K., Rathore, S., Gandhi, N., Kondekar, P. N., Banchhor, S., Sreenivas, V. B., Song, Y. S., & Bagga, N. (2023). Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023 (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM55494.2023.10103127

Jaisawal, Rajeewa Kumar ; Rathore, Sunil ; Gandhi, Navneet et al. / Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

@inproceedings{e210cfae352349b5b0d498d6ce92e7ac,

title = "Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET",

abstract = "The realization of a Negative Capacitance (NC) phenomenon in TCAD, considering several realistic aspects of transport physics, remains challenging. In this paper, we investigated the aging and reliability of the NC-FinFET considering the self-heating effect (SHE) and interface trap charges with varying concentration and energy location. In general, the FEPolarization and hydrodynamic models cannot be coupled at the same simulation flow; thus, we employed the iterative approach. Due to SHE, the lattice temperature increases, which impacts the Landau parameters and, in turn, the NC behavior. Moreover, we also evaluated the impact of ambient temperature on device performance with and without (w/o) considering SHE.",

author = "Jaisawal, \{Rajeewa Kumar\} and Sunil Rathore and Navneet Gandhi and Kondekar, \{P. N.\} and Shashank Banchhor and Sreenivas, \{V. Bharath\} and Song, \{Young Suh\} and Navjeet Bagga",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023 ; Conference date: 07-03-2023 Through 10-03-2023",

year = "2023",

doi = "10.1109/EDTM55494.2023.10103127",

language = "English",

series = "7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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address = "United States",

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Jaisawal, RK, Rathore, S, Gandhi, N, Kondekar, PN, Banchhor, S, Sreenivas, VB, Song, YS & Bagga, N 2023, Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET. in 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023, Institute of Electrical and Electronics Engineers Inc., 7th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2023, Seoul, Korea, Republic of, 07-03-23. https://doi.org/10.1109/EDTM55494.2023.10103127

Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET. / Jaisawal, Rajeewa Kumar; Rathore, Sunil; Gandhi, Navneet et al.
7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET

AU - Jaisawal, Rajeewa Kumar

AU - Rathore, Sunil

AU - Gandhi, Navneet

AU - Kondekar, P. N.

AU - Banchhor, Shashank

AU - Sreenivas, V. Bharath

AU - Song, Young Suh

AU - Bagga, Navjeet

PY - 2023

Y1 - 2023

N2 - The realization of a Negative Capacitance (NC) phenomenon in TCAD, considering several realistic aspects of transport physics, remains challenging. In this paper, we investigated the aging and reliability of the NC-FinFET considering the self-heating effect (SHE) and interface trap charges with varying concentration and energy location. In general, the FEPolarization and hydrodynamic models cannot be coupled at the same simulation flow; thus, we employed the iterative approach. Due to SHE, the lattice temperature increases, which impacts the Landau parameters and, in turn, the NC behavior. Moreover, we also evaluated the impact of ambient temperature on device performance with and without (w/o) considering SHE.

AB - The realization of a Negative Capacitance (NC) phenomenon in TCAD, considering several realistic aspects of transport physics, remains challenging. In this paper, we investigated the aging and reliability of the NC-FinFET considering the self-heating effect (SHE) and interface trap charges with varying concentration and energy location. In general, the FEPolarization and hydrodynamic models cannot be coupled at the same simulation flow; thus, we employed the iterative approach. Due to SHE, the lattice temperature increases, which impacts the Landau parameters and, in turn, the NC behavior. Moreover, we also evaluated the impact of ambient temperature on device performance with and without (w/o) considering SHE.

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DO - 10.1109/EDTM55494.2023.10103127

M3 - Conference contribution

AN - SCOPUS:85158099767

T3 - 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023

BT - 7th IEEE Electron Devices Technology and Manufacturing Conference

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ER -

Jaisawal RK, Rathore S, Gandhi N, Kondekar PN, Banchhor S, Sreenivas VB et al. Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. 2023. (7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023). doi: 10.1109/EDTM55494.2023.10103127

Self-Heating and Interface Traps Assisted Early Aging Revelation and Reliability Analysis of Negative Capacitance FinFET

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