TY - GEN
T1 - Self-Heating Aware Threshold Voltage Modulation Conforming to Process and Ambient Temperature Variation for Reliable Nanosheet FET
AU - Rathore, Sunil
AU - Jaisawal, Rajeewa Kumar
AU - Kondekar, P. N.
AU - Gandhi, Navneet
AU - Banchhor, Shashank
AU - Song, Young Suh
AU - Bagga, Navjeet
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - Internal and external process variations severely affect the device threshold voltage (V_th) and, in turn, the device's reliability. For the first time, this paper presented a thorough analysis of the self-heating aware V_th variation of a Nanosheet FET and, thus, the device's aging. Using well-calibrated TCAD models, we evaluated the 'change in V_th and performed an extensive design space exploration to analyze: (i) the impact of work function (WF) modulation owing to metal grain sizes and effective grains (for confined dimensions) on V_th variation; (ii) the impact of ambient temperature (TA) on V_th variation; (iii) the influence of trap charges on device characteristics; (iv) how the consideration of RDF impacted V_th; (v) the device's aging, i.e., end of a lifetime (EOL). These investigations provided guidelines for designing a reliable Nanosheet FET (NSFET) to investigate and mitigate early aging.
AB - Internal and external process variations severely affect the device threshold voltage (V_th) and, in turn, the device's reliability. For the first time, this paper presented a thorough analysis of the self-heating aware V_th variation of a Nanosheet FET and, thus, the device's aging. Using well-calibrated TCAD models, we evaluated the 'change in V_th and performed an extensive design space exploration to analyze: (i) the impact of work function (WF) modulation owing to metal grain sizes and effective grains (for confined dimensions) on V_th variation; (ii) the impact of ambient temperature (TA) on V_th variation; (iii) the influence of trap charges on device characteristics; (iv) how the consideration of RDF impacted V_th; (v) the device's aging, i.e., end of a lifetime (EOL). These investigations provided guidelines for designing a reliable Nanosheet FET (NSFET) to investigate and mitigate early aging.
UR - https://www.scopus.com/pages/publications/85160436874
UR - https://www.scopus.com/pages/publications/85160436874#tab=citedBy
U2 - 10.1109/IRPS48203.2023.10117918
DO - 10.1109/IRPS48203.2023.10117918
M3 - Conference contribution
AN - SCOPUS:85160436874
T3 - IEEE International Reliability Physics Symposium Proceedings
BT - 2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 61st IEEE International Reliability Physics Symposium, IRPS 2023
Y2 - 26 March 2023 through 30 March 2023
ER -