Abstract
Self-powered photodetectors with high responsivity and external quantum efficiency (EQE) are in great demand for various practical applications. This paper reports the fabrication and evaluation of self-powered, high-performing ultraviolet photodetectors with fast switching action. A p-n junction was formed by spin coating n-type ZnO on p-silicon substrates. The photodetector showed a responsivity of 0.15 A/W and an EQE of 52 %. The switching speed of devices was as low as 250 ms, even under zero bias. XRD analysis revealed the hexagonal wurtzite structure and AFM images confirmed the good quality of the films with roughness values as low as 2 nm. Defect analysis was done by photoluminescence studies. The molarity of the precursor solution and the annealing temperature were varied to optimize the performance. Sample with molarity 0.5 M annealed at 500 °C showed the best results.
Original language | English |
---|---|
Article number | 116141 |
Journal | Optical Materials |
Volume | 157 |
DOIs | |
Publication status | Published - 11-2024 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Spectroscopy
- Physical and Theoretical Chemistry
- Organic Chemistry
- Inorganic Chemistry
- Electrical and Electronic Engineering