Self-powered transparent ultraviolet photo-sensors based on bilayer p-NiO/n-Zn(1−x) Sn(x)O heterojunction

Prashant Bhat; Parashurama Salunkhe; M. S. Murari; Dhananjaya Kekuda

doi:10.1016/j.sna.2022.113479

Self-powered transparent ultraviolet photo-sensors based on bilayer p-NiO/n-Zn_(1−x) Sn_(x)O heterojunction

Prashant Bhat
, Parashurama Salunkhe
, M. S. Murari
, Dhananjaya Kekuda^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

A heterostructure using p-NiO/n-Zn_(1−x)Sn_(x)O (x = 0.14) (TZO) junction was successfully fabricated by DC-magnetron reactive sputtering technique for UV sensing. Under weak illumination of UV radiation (365 nm, 0.06 mW/cm²), the fabricated device had shown a photo responsivity of ~3.00 mA W⁻¹ and quantum efficiencies about 1.01% even in zero bias condition. The device also exhibited impressive photo response about 19.70 mA W⁻¹ and external quantum efficiencies nearly 6.69% at low reverse external bias of 3 V. The fabricated hybrid hetero structured UV photosensors had also shown great detectivity and transient speed of response about 8.6 × 10¹⁰ Jones, 2.3 s/1.4 s at zero bias respectively. Hence these observations suggest that p-NiO/n-TZO heterojunction could be used as novel, self-powered highly transparent photosensors for detecting UV radiation.

Original language	English
Article number	113479
Journal	Sensors and Actuators A: Physical
Volume	338
DOIs	https://doi.org/10.1016/j.sna.2022.113479
Publication status	Published - 01-05-2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

Access to Document

10.1016/j.sna.2022.113479

Cite this

@article{3e95c73a39aa4814968528ef6ed501eb,

title = "Self-powered transparent ultraviolet photo-sensors based on bilayer p-NiO/n-Zn(1−x) Sn(x)O heterojunction",

abstract = "A heterostructure using p-NiO/n-Zn(1−x)Sn(x)O (x = 0.14) (TZO) junction was successfully fabricated by DC-magnetron reactive sputtering technique for UV sensing. Under weak illumination of UV radiation (365 nm, 0.06 mW/cm2), the fabricated device had shown a photo responsivity of \textasciitilde{}3.00 mA W−1 and quantum efficiencies about 1.01\% even in zero bias condition. The device also exhibited impressive photo response about 19.70 mA W−1 and external quantum efficiencies nearly 6.69\% at low reverse external bias of 3 V. The fabricated hybrid hetero structured UV photosensors had also shown great detectivity and transient speed of response about 8.6 × 1010 Jones, 2.3 s/1.4 s at zero bias respectively. Hence these observations suggest that p-NiO/n-TZO heterojunction could be used as novel, self-powered highly transparent photosensors for detecting UV radiation.",

author = "Prashant Bhat and Parashurama Salunkhe and Murari, \{M. S.\} and Dhananjaya Kekuda",

note = "Funding Information: The authors are thankful to the Manipal Academy of Higher Education for the financial support under the T.M.A Pai Ph.D. scholarship program and Intramural Fellowship. A part of this research work has used the facility at IISc-CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India. Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

month = may,

day = "1",

doi = "10.1016/j.sna.2022.113479",

language = "English",

volume = "338",

journal = "Sensors and Actuators A: Physical",

issn = "0924-4247",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Self-powered transparent ultraviolet photo-sensors based on bilayer p-NiO/n-Zn(1−x) Sn(x)O heterojunction

AU - Bhat, Prashant

AU - Salunkhe, Parashurama

AU - Murari, M. S.

AU - Kekuda, Dhananjaya

N1 - Funding Information: The authors are thankful to the Manipal Academy of Higher Education for the financial support under the T.M.A Pai Ph.D. scholarship program and Intramural Fellowship. A part of this research work has used the facility at IISc-CeNSE, funded by the Ministry of Electronics and Information Technology (MeitY), Government of India. Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/5/1

Y1 - 2022/5/1

N2 - A heterostructure using p-NiO/n-Zn(1−x)Sn(x)O (x = 0.14) (TZO) junction was successfully fabricated by DC-magnetron reactive sputtering technique for UV sensing. Under weak illumination of UV radiation (365 nm, 0.06 mW/cm2), the fabricated device had shown a photo responsivity of ~3.00 mA W−1 and quantum efficiencies about 1.01% even in zero bias condition. The device also exhibited impressive photo response about 19.70 mA W−1 and external quantum efficiencies nearly 6.69% at low reverse external bias of 3 V. The fabricated hybrid hetero structured UV photosensors had also shown great detectivity and transient speed of response about 8.6 × 1010 Jones, 2.3 s/1.4 s at zero bias respectively. Hence these observations suggest that p-NiO/n-TZO heterojunction could be used as novel, self-powered highly transparent photosensors for detecting UV radiation.

AB - A heterostructure using p-NiO/n-Zn(1−x)Sn(x)O (x = 0.14) (TZO) junction was successfully fabricated by DC-magnetron reactive sputtering technique for UV sensing. Under weak illumination of UV radiation (365 nm, 0.06 mW/cm2), the fabricated device had shown a photo responsivity of ~3.00 mA W−1 and quantum efficiencies about 1.01% even in zero bias condition. The device also exhibited impressive photo response about 19.70 mA W−1 and external quantum efficiencies nearly 6.69% at low reverse external bias of 3 V. The fabricated hybrid hetero structured UV photosensors had also shown great detectivity and transient speed of response about 8.6 × 1010 Jones, 2.3 s/1.4 s at zero bias respectively. Hence these observations suggest that p-NiO/n-TZO heterojunction could be used as novel, self-powered highly transparent photosensors for detecting UV radiation.

UR - https://www.scopus.com/pages/publications/85125575535

UR - https://www.scopus.com/pages/publications/85125575535#tab=citedBy

U2 - 10.1016/j.sna.2022.113479

DO - 10.1016/j.sna.2022.113479

M3 - Article

AN - SCOPUS:85125575535

SN - 0924-4247

VL - 338

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

M1 - 113479

ER -

Self-powered transparent ultraviolet photo-sensors based on bilayer p-NiO/n-Zn_(1−x) Sn_(x)O heterojunction

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this