TY - JOUR
T1 - Sensitivity estimation of indium oxide thin film for gamma sensing
AU - Aparna, C.
AU - Shetty, Pramoda Kumara
AU - Mahesha, M. G.
AU - Yashodhara, I.
AU - Karunakara, N.
N1 - Funding Information:
The authors are grateful to NITK, Surathkal for the Raman facility; CARRT Mangalore University, Mangalagangothri, India for the gamma irradiation facility. Ms Aparna would like to thank the Manipal Academy of Higher Education (MAHE) for providing the scholarship for research work and instrumentation facilities.
Funding Information:
The authors are grateful to NITK, Surathkal for the Raman facility; CARRT Mangalore University, Mangalagangothri, India for the gamma irradiation facility. Ms Aparna would like to thank the Manipal Academy of Higher Education (MAHE) for providing the scholarship for research work and instrumentation facilities.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/7
Y1 - 2023/7
N2 - This article aims to study the modification in the structural, optical and electrical properties of indium oxide thin film after gamma irradiation and estimation of sensitivity for gamma sensing applications. The thin film of indium oxide was deposited on a 450 °C preheated glass substrate using the spray pyrolysis technique. The deposited thin film of molar concentration 0.15 M and thickness of around 600 nm was irradiated with different gamma doses (100 Gy, 200 Gy, 300 Gy and 400 Gy). The optical properties of the irradiated film are studied using UV–Visible spectroscopy. Transmittance increased after irradiation up to 200 Gy and beyond that, it decreased. Indium oxide is an n-type semiconductor which exhibits both direct and indirect transitions. Both direct and indirect bandgap energy are calculated using Tauc’s plot. Extinction coefficient and refractive index variation with irradiation were also estimated. Photoluminescence study confirmed the gamma-induced defect formation and annihilation for an irradiation dose of 400 Gy and 200 Gy, respectively. Resistivity also decreased up to 200 Gy and beyond that, it increased. The sensitivity of the deposited film was estimated from the electrical measurements, and it lies between 10.7 and 53.4 mA/cm2/Gy. Graphical abstract: [Figure not available: see fulltext.].
AB - This article aims to study the modification in the structural, optical and electrical properties of indium oxide thin film after gamma irradiation and estimation of sensitivity for gamma sensing applications. The thin film of indium oxide was deposited on a 450 °C preheated glass substrate using the spray pyrolysis technique. The deposited thin film of molar concentration 0.15 M and thickness of around 600 nm was irradiated with different gamma doses (100 Gy, 200 Gy, 300 Gy and 400 Gy). The optical properties of the irradiated film are studied using UV–Visible spectroscopy. Transmittance increased after irradiation up to 200 Gy and beyond that, it decreased. Indium oxide is an n-type semiconductor which exhibits both direct and indirect transitions. Both direct and indirect bandgap energy are calculated using Tauc’s plot. Extinction coefficient and refractive index variation with irradiation were also estimated. Photoluminescence study confirmed the gamma-induced defect formation and annihilation for an irradiation dose of 400 Gy and 200 Gy, respectively. Resistivity also decreased up to 200 Gy and beyond that, it increased. The sensitivity of the deposited film was estimated from the electrical measurements, and it lies between 10.7 and 53.4 mA/cm2/Gy. Graphical abstract: [Figure not available: see fulltext.].
UR - https://www.scopus.com/pages/publications/85163752685
UR - https://www.scopus.com/pages/publications/85163752685#tab=citedBy
U2 - 10.1007/s10853-023-08720-z
DO - 10.1007/s10853-023-08720-z
M3 - Article
AN - SCOPUS:85163752685
SN - 0022-2461
VL - 58
SP - 11374
EP - 11391
JO - Journal of Materials Science
JF - Journal of Materials Science
IS - 27
ER -