Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application

Ankit Dixit; Rajeewa Kumar Jaisawal; Sunil Rathore; Suneet Kumar Agnihotri; P. N. Kondekar

doi:10.1109/CAPS52117.2021.9730672

Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application

Ankit Dixit
, Rajeewa Kumar Jaisawal
, Sunil Rathore
, Suneet Kumar Agnihotri
, P. N. Kondekar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization MOS (SUTIMOS), with conventional IMOS and earlier proposed UTIMOS was also done based on the device parameters such as electric field, impact ionization rate, band diagram, and the current density. Effect of the schottky height of silicide material was also performed on the transfer and output characteristic of the device. All the study has been performed on the sentaurus 2D device simulator TCAD tool.

Original language	English
Title of host publication	Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665445771
DOIs	https://doi.org/10.1109/CAPS52117.2021.9730672
Publication status	Published - 2021
Event	2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021 - Jabalpur, India Duration: 10-12-2021 → 12-12-2021

Publication series

Name	Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021

Conference

Conference	2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021
Country/Territory	India
City	Jabalpur
Period	10-12-21 → 12-12-21

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

All Science Journal Classification (ASJC) codes

Signal Processing
Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Control and Systems Engineering
Electrical and Electronic Engineering
Control and Optimization
Artificial Intelligence

Access to Document

10.1109/CAPS52117.2021.9730672

Cite this

Dixit, A., Jaisawal, R. K., Rathore, S., Agnihotri, S. K., & Kondekar, P. N. (2021). Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application. In Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021 (Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CAPS52117.2021.9730672

Dixit, Ankit ; Jaisawal, Rajeewa Kumar ; Rathore, Sunil et al. / Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application. Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021).

@inproceedings{71cd0ff656304f1090ec286286f0cc35,

title = "Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application",

abstract = "In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization MOS (SUTIMOS), with conventional IMOS and earlier proposed UTIMOS was also done based on the device parameters such as electric field, impact ionization rate, band diagram, and the current density. Effect of the schottky height of silicide material was also performed on the transfer and output characteristic of the device. All the study has been performed on the sentaurus 2D device simulator TCAD tool.",

author = "Ankit Dixit and Jaisawal, \{Rajeewa Kumar\} and Sunil Rathore and Agnihotri, \{Suneet Kumar\} and Kondekar, \{P. N.\}",

note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021 ; Conference date: 10-12-2021 Through 12-12-2021",

year = "2021",

doi = "10.1109/CAPS52117.2021.9730672",

language = "English",

series = "Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021",

address = "United States",

}

Dixit, A, Jaisawal, RK, Rathore, S, Agnihotri, SK & Kondekar, PN 2021, Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application. in Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021. Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021, Institute of Electrical and Electronics Engineers Inc., 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021, Jabalpur, India, 10-12-21. https://doi.org/10.1109/CAPS52117.2021.9730672

Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application. / Dixit, Ankit; Jaisawal, Rajeewa Kumar; Rathore, Sunil et al.
Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021. Institute of Electrical and Electronics Engineers Inc., 2021. (Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application

AU - Dixit, Ankit

AU - Jaisawal, Rajeewa Kumar

AU - Rathore, Sunil

AU - Agnihotri, Suneet Kumar

AU - Kondekar, P. N.

PY - 2021

Y1 - 2021

N2 - In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization MOS (SUTIMOS), with conventional IMOS and earlier proposed UTIMOS was also done based on the device parameters such as electric field, impact ionization rate, band diagram, and the current density. Effect of the schottky height of silicide material was also performed on the transfer and output characteristic of the device. All the study has been performed on the sentaurus 2D device simulator TCAD tool.

AB - In this article, Impact Ionization Metal Oxide Semiconductor (IMOS) device is investigated with silicide source material. A comparatively study of Silicide Ultrathin Impact Ionization MOS (SUTIMOS), with conventional IMOS and earlier proposed UTIMOS was also done based on the device parameters such as electric field, impact ionization rate, band diagram, and the current density. Effect of the schottky height of silicide material was also performed on the transfer and output characteristic of the device. All the study has been performed on the sentaurus 2D device simulator TCAD tool.

UR - https://www.scopus.com/pages/publications/85127250821

UR - https://www.scopus.com/pages/publications/85127250821#tab=citedBy

U2 - 10.1109/CAPS52117.2021.9730672

DO - 10.1109/CAPS52117.2021.9730672

M3 - Conference contribution

AN - SCOPUS:85127250821

T3 - Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021

BT - Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021

Y2 - 10 December 2021 through 12 December 2021

ER -

Dixit A, Jaisawal RK, Rathore S, Agnihotri SK, Kondekar PN. Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application. In Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021. Institute of Electrical and Electronics Engineers Inc. 2021. (Proceedings - 2021 International Conference on Control, Automation, Power and Signal Processing, CAPS 2021). doi: 10.1109/CAPS52117.2021.9730672

Silicide Ultrathin Impact Ionization MOS (SUTIMOS) for Ultra Low Power VLSI Application

Abstract

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UN SDGs

All Science Journal Classification (ASJC) codes

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