Simulation analysis of Ge2Sb2Te5 Vertical Photodetector on Silicon Photonic for Various Thickness Levels

  • Manoj Tolani*
  • , Arun Balodi
  • , Ambar Bajpai
  • *Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ge2Sb2Te5 (GST), an amorphous/crystalline chalcogenide material, is a promising candidate for vertical photodetectors due to its exceptional light absorption properties and seamless integration with silicon photonic platforms. This paper explores the utilization of simulations to analyze and optimize the design of Ge2Sb2Te5 vertical photodetectors. In the proposed method the thickness of Silicon and crystalline GST (c-GST) is optimized for the optimal performance. Two configurations are compared, evaluating the trade-off between photocurrent generation and thermally induced dark current. The results prove the trade-off between cathode current in the presence of photons and dark currents due to temperature.

Original languageEnglish
Title of host publication2024 IEEE Space, Aerospace and Defence Conference, SPACE 2024
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages505-508
Number of pages4
ISBN (Electronic)9798350367386
DOIs
Publication statusPublished - 2024
Event2024 IEEE Space, Aerospace and Defence Conference, SPACE 2024 - Bangalore, India
Duration: 22-07-202423-07-2024

Publication series

Name2024 IEEE Space, Aerospace and Defence Conference, SPACE 2024

Conference

Conference2024 IEEE Space, Aerospace and Defence Conference, SPACE 2024
Country/TerritoryIndia
CityBangalore
Period22-07-2423-07-24

All Science Journal Classification (ASJC) codes

  • Artificial Intelligence
  • Computer Networks and Communications
  • Signal Processing
  • Aerospace Engineering
  • Instrumentation

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