TY - JOUR
T1 - Spectroscopic and electrical analysis of p–Si/n-ZnSxSe1−x (0.0 ≤ x ≤ 1.0) heterostructures for photodetector applications
AU - Moger, Sahana Nagappa
AU - Mahesha, M. G.
N1 - Funding Information:
The authors are grateful to UGC-DAE CSR, Indore, Govt. of India (CSR-IC-MSRSR-11/CRS-219/2017-18/1300) for financial assistance. Special thanks to V. Raghavendra Reddy, UGC-DAE Consortium for Scientific Research, Indore 452017 India, for extending the GIXRD facility.
Funding Information:
The authors are grateful to UGC-DAE CSR, Indore, Govt. of India (CSR-IC-MSRSR-11/CRS-219/2017-18/1300) for financial assistance. Special thanks to V. Raghavendra Reddy, UGC-DAE Consortium for Scientific Research, Indore 452017 India, for extending the GIXRD facility.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/4
Y1 - 2023/4
N2 - The present paper focuses on the properties of the p–Si/ ZnSxSe1−x (0 ≤ x ≤ 1) heterojunctions in photodetector applications. The heterostructures were fabricated by depositing ZnSSe on Si wafer using the thermal co-evaporation technique with ZnS and ZnSe powders. The GIXRD study showed that films were in cubic phase, and the prominent peak was shifted with composition x. The maximum crystallite size of the films was found for x = 0.8. The presence of point defects and emission related to higher Zn content in the thin films was confirmed by Photoluminescence. Temperature-dependent Raman analysis reveals that the longitudinal optical phonon modes shift to the lower wavenumber side as temperature decreases, which describes the variation of lattice parameters with temperature. The barrier height and ideality factor were calculated by implementing the thermionic emission. The photoresponse of p–Si/ ZnSxSe1−x heterostructures was studied. The investigation showed that the sample with x = 0.8 exhibits high photosensitivity and is suitable for photodetector applications.
AB - The present paper focuses on the properties of the p–Si/ ZnSxSe1−x (0 ≤ x ≤ 1) heterojunctions in photodetector applications. The heterostructures were fabricated by depositing ZnSSe on Si wafer using the thermal co-evaporation technique with ZnS and ZnSe powders. The GIXRD study showed that films were in cubic phase, and the prominent peak was shifted with composition x. The maximum crystallite size of the films was found for x = 0.8. The presence of point defects and emission related to higher Zn content in the thin films was confirmed by Photoluminescence. Temperature-dependent Raman analysis reveals that the longitudinal optical phonon modes shift to the lower wavenumber side as temperature decreases, which describes the variation of lattice parameters with temperature. The barrier height and ideality factor were calculated by implementing the thermionic emission. The photoresponse of p–Si/ ZnSxSe1−x heterostructures was studied. The investigation showed that the sample with x = 0.8 exhibits high photosensitivity and is suitable for photodetector applications.
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U2 - 10.1007/s10854-023-10354-5
DO - 10.1007/s10854-023-10354-5
M3 - Article
AN - SCOPUS:85153274237
SN - 0957-4522
VL - 34
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 11
M1 - 958
ER -