Structural and Electronic Properties of Donor-Doped V₂O₅: Insights from Surface Morphology, and Activation Energy Analysis

This study delves into the influence of donor dopants, specifically Sn, on the properties of V2O5 semiconductor thin films. Using spray pyrolysis technique, both undoped and 1% Sn-doped thin films were developed on glass substrates. Scanning electron microscopy analysis revealed an increase in crystallite size from 39 nm in pristine V2O5 thin films to 52 nm with 1% Sn doping. Similarly, atomic force microscopy examination showcased the surface grain height rising from 46 nm to 58 nm. These enhancements underscore the impact of Sn doping in amplifying the crystal and grain size of V2O5 thin films. Furthermore, Arrhenius plots indicated a reduction in activation energy from 1.169 eV in undoped V2O5 to 1.117 eV in tin doped samples, highlighting alterations in the semiconducting behaviour of the material. These findings emphasize the applicability of Sn-doped V2O5 thin films for optoelectronic devices and gas sensors.