TY - JOUR
T1 - Structural and Optical Properties of ZnS Thin Films by SILAR Technique obtained by acetate Precursor
AU - Ashith, V. K.
AU - Gowrish Rao, K.
N1 - Funding Information:
The research work presented here is fully funded and MU scholarship by Manipal Institute of Technology and Manipal University, Manipal, India. Part of the characterization work was done in Central Instrumentation Facility, MIT Innovation Centre, Manipal University.
Publisher Copyright:
© 2018 Institute of Physics Publishing. All rights reserved.
PY - 2018
Y1 - 2018
N2 - In the group of II-VI compound semiconductor, zinc sulphide (ZnS) has numerous potential applications in optoelectronic devices. In this effort, we have prepared ZnS thin films on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method. Zinc acetate and sodium sulphide were used as cationic and anionic precursors for the films. The crystal structure and surface morphology of the films were studied by X-ray diffractometer (XRD) and Scanning electron microscope (SEM). The deposited ZnS thin films showed polycrystalline with cubic phase. The increment in grain size is an effect of the increase in thickness of the films in accordance with the immersion cycles. The SEM images of the films confirmed that films were uniformly distributed in substrates and pin hole free. The band-gap of the films was estimated.
AB - In the group of II-VI compound semiconductor, zinc sulphide (ZnS) has numerous potential applications in optoelectronic devices. In this effort, we have prepared ZnS thin films on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method. Zinc acetate and sodium sulphide were used as cationic and anionic precursors for the films. The crystal structure and surface morphology of the films were studied by X-ray diffractometer (XRD) and Scanning electron microscope (SEM). The deposited ZnS thin films showed polycrystalline with cubic phase. The increment in grain size is an effect of the increase in thickness of the films in accordance with the immersion cycles. The SEM images of the films confirmed that films were uniformly distributed in substrates and pin hole free. The band-gap of the films was estimated.
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U2 - 10.1088/1757-899X/360/1/012058
DO - 10.1088/1757-899X/360/1/012058
M3 - Conference article
AN - SCOPUS:85056617209
SN - 1757-8981
VL - 360
JO - IOP Conference Series: Materials Science and Engineering
JF - IOP Conference Series: Materials Science and Engineering
IS - 1
M1 - 012058
T2 - 2nd International Conference on Materials Science and Technology, ICMST 2016
Y2 - 5 June 2016 through 8 June 2016
ER -