Structural and Optical Properties of ZnS Thin Films by SILAR Technique obtained by acetate Precursor

In the group of II-VI compound semiconductor, zinc sulphide (ZnS) has numerous potential applications in optoelectronic devices. In this effort, we have prepared ZnS thin films on glass substrates by Successive Ion Layer Adsorption and Reaction (SILAR) method. Zinc acetate and sodium sulphide were used as cationic and anionic precursors for the films. The crystal structure and surface morphology of the films were studied by X-ray diffractometer (XRD) and Scanning electron microscope (SEM). The deposited ZnS thin films showed polycrystalline with cubic phase. The increment in grain size is an effect of the increase in thickness of the films in accordance with the immersion cycles. The SEM images of the films confirmed that films were uniformly distributed in substrates and pin hole free. The band-gap of the films was estimated.