Structural and optical studies of gamma irradiated N-doped 4H-SiC

Indudhar Panduranga Vali; Pramoda Kumara Shetty; M. G. Mahesha; V. G. Sathe; D. M. Phase; R. J. Choudhary

doi:10.1016/j.nimb.2018.12.016

Structural and optical studies of gamma irradiated N-doped 4H-SiC

Indudhar Panduranga Vali
, Pramoda Kumara Shetty^*
, M. G. Mahesha
, V. G. Sathe
, D. M. Phase
, R. J. Choudhary

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

22 Citations (Scopus)

Abstract

In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (E_U) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-A_norm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.

Original language	English
Pages (from-to)	101-106
Number of pages	6
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	440
DOIs	https://doi.org/10.1016/j.nimb.2018.12.016
Publication status	Published - 01-02-2019

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nimb.2018.12.016

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title = "Structural and optical studies of gamma irradiated N-doped 4H-SiC",

abstract = "In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.",

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T1 - Structural and optical studies of gamma irradiated N-doped 4H-SiC

AU - Vali, Indudhar Panduranga

AU - Shetty, Pramoda Kumara

AU - Mahesha, M. G.

AU - Sathe, V. G.

AU - Phase, D. M.

AU - Choudhary, R. J.

PY - 2019/2/1

Y1 - 2019/2/1

N2 - In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.

AB - In this paper, the gamma irradiation effects on the structural and optical properties of N-doped 4H-SiC (n-4H-SiC) is presented up to a cumulative gamma radiation dose of 1500 kGy. The studies showed marginal and inconsistent variation in the c- and a-axis lattice constants of 4H-SiC due to the accumulation of gamma-induced defect states. The modifications in the longitudinal optical plasmon-phonon coupled (LOPC) modes, Biedermann absorption bands, Urbach energy (EU) and defect related photoluminescence (DPL) bands are discussed at different (500, 1000 and 1500 kGy) irradiation doses. Despite these effects, the overall gamma-induced disorder (1-Anorm) and variation in the free carrier concentrations (n) are found to be negligible and demonstrating the radiation resistant property of n-4H-SiC under gamma radiation environment.

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ER -

Structural and optical studies of gamma irradiated N-doped 4H-SiC

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