Structural, optical, and electrical characteristics of gamma-irradiated Zn-doped indium oxide thin films for sensor applications

Indium oxide (INO) thin film doped with 4 at% of zinc was synthesized using spray pyrolysis to study the impact of gamma irradiation on Zn doped indium oxide thin film for gamma dosimetry applications. The film thus deposited on substrate optimized at a temperature of 450⁰C was irradiated with four different doses of gamma radiation. The structural properties were enhanced after irradiation. The cubic phase of the material and the existence of oxygen vacancies were confirmed using Raman spectroscopy. PL spectral analysis confirmed the presence of oxygen vacancies. Zn-doped In₂O₃ was indicated to be suitable for dosimetric purposes by the thermoluminescence study. XPS analysis confirms defect creation after irradiation. The resistivity of the sample decreased after irradiation. Zn-doped In₂O₃ thin films show a notable enhancement in thermoluminescent (TL) response upon gamma irradiation, with a prominent glow peak near 250 °C and a linear response across doses from 25 to 200 Gy, demonstrating their suitability for gamma dosimetry applications.