TY - JOUR
T1 - Structural, optical, and electrical characterization of spray-deposited Mg0.02Zn0.98Se thin film for buffer layer application
AU - Krishna, V. S.Ganesha
AU - Mahesha, M. G.
N1 - Funding Information:
This manuscript is part of the special issue of selected papers from the 6th edition of biennial International Conference on Nanoscience and Nanotechnology (ICONN-2021). Ganesha Krishna V S is thankful to DST India for providing INSPIRE fellowship through grant number IF190268.
Publisher Copyright:
© 2021, The Author(s).
PY - 2022/4
Y1 - 2022/4
N2 - In this work, spray-deposited Mg0.02Zn0.98Se thin films were characterized to determine their structural, optical, and electrical properties. The optical band gap of Mg-doped ZnSe thin film was observed to be around 3.05 eV, with high optical transmittance of about 50–70% in the visible region. The crystallite size of Mg-doped ZnSe thin film was about 8 nm, as observed from the X-ray diffraction (XRD) pattern. Elemental composition of Mg-doped ZnSe thin film was confirmed from X-ray energy-dispersive analysis (EDAS). Raman study showed the development of minor strain in ZnSe system due to the incorporation of Mg. The resistivity of the Mg-doped ZnSe film was about 3.82 ohm-m with a carrier concentration of 8.2 × 1011 cm− 3. Mg0.02Zn0.98Se thin films exhibited promising opto-electronic properties such as high transparency and conductivity that are essential for a solar buffer layer that could replace relatively toxic CdS layer.
AB - In this work, spray-deposited Mg0.02Zn0.98Se thin films were characterized to determine their structural, optical, and electrical properties. The optical band gap of Mg-doped ZnSe thin film was observed to be around 3.05 eV, with high optical transmittance of about 50–70% in the visible region. The crystallite size of Mg-doped ZnSe thin film was about 8 nm, as observed from the X-ray diffraction (XRD) pattern. Elemental composition of Mg-doped ZnSe thin film was confirmed from X-ray energy-dispersive analysis (EDAS). Raman study showed the development of minor strain in ZnSe system due to the incorporation of Mg. The resistivity of the Mg-doped ZnSe film was about 3.82 ohm-m with a carrier concentration of 8.2 × 1011 cm− 3. Mg0.02Zn0.98Se thin films exhibited promising opto-electronic properties such as high transparency and conductivity that are essential for a solar buffer layer that could replace relatively toxic CdS layer.
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U2 - 10.1007/s10854-021-06437-w
DO - 10.1007/s10854-021-06437-w
M3 - Article
AN - SCOPUS:85109153377
SN - 0957-4522
VL - 33
SP - 8529
EP - 8533
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 11
ER -