Structural, optical, and electrical characterization of spray-deposited Mg0.02Zn0.98Se thin film for buffer layer application

V. S.Ganesha Krishna; M. G. Mahesha

doi:10.1007/s10854-021-06437-w

Structural, optical, and electrical characterization of spray-deposited Mg_0.02Zn_0.98Se thin film for buffer layer application

V. S.Ganesha Krishna
, M. G. Mahesha^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

In this work, spray-deposited Mg_0.02Zn_0.98Se thin films were characterized to determine their structural, optical, and electrical properties. The optical band gap of Mg-doped ZnSe thin film was observed to be around 3.05 eV, with high optical transmittance of about 50–70% in the visible region. The crystallite size of Mg-doped ZnSe thin film was about 8 nm, as observed from the X-ray diffraction (XRD) pattern. Elemental composition of Mg-doped ZnSe thin film was confirmed from X-ray energy-dispersive analysis (EDAS). Raman study showed the development of minor strain in ZnSe system due to the incorporation of Mg. The resistivity of the Mg-doped ZnSe film was about 3.82 ohm-m with a carrier concentration of 8.2 × 10¹¹ cm^{− 3}. Mg_0.02Zn_0.98Se thin films exhibited promising opto-electronic properties such as high transparency and conductivity that are essential for a solar buffer layer that could replace relatively toxic CdS layer.

Original language	English
Pages (from-to)	8529-8533
Number of pages	5
Journal	Journal of Materials Science: Materials in Electronics
Volume	33
Issue number	11
DOIs	https://doi.org/10.1007/s10854-021-06437-w
Publication status	Published - 04-2022

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{19bb8bf03fb7433394320fc9f7f681b9,

title = "Structural, optical, and electrical characterization of spray-deposited Mg0.02Zn0.98Se thin film for buffer layer application",

abstract = "In this work, spray-deposited Mg0.02Zn0.98Se thin films were characterized to determine their structural, optical, and electrical properties. The optical band gap of Mg-doped ZnSe thin film was observed to be around 3.05 eV, with high optical transmittance of about 50–70\% in the visible region. The crystallite size of Mg-doped ZnSe thin film was about 8 nm, as observed from the X-ray diffraction (XRD) pattern. Elemental composition of Mg-doped ZnSe thin film was confirmed from X-ray energy-dispersive analysis (EDAS). Raman study showed the development of minor strain in ZnSe system due to the incorporation of Mg. The resistivity of the Mg-doped ZnSe film was about 3.82 ohm-m with a carrier concentration of 8.2 × 1011 cm− 3. Mg0.02Zn0.98Se thin films exhibited promising opto-electronic properties such as high transparency and conductivity that are essential for a solar buffer layer that could replace relatively toxic CdS layer.",

author = "Krishna, \{V. S.Ganesha\} and Mahesha, \{M. G.\}",

note = "Funding Information: This manuscript is part of the special issue of selected papers from the 6th edition of biennial International Conference on Nanoscience and Nanotechnology (ICONN-2021). Ganesha Krishna V S is thankful to DST India for providing INSPIRE fellowship through grant number IF190268. Publisher Copyright: {\textcopyright} 2021, The Author(s).",

year = "2022",

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doi = "10.1007/s10854-021-06437-w",

language = "English",

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AU - Krishna, V. S.Ganesha

AU - Mahesha, M. G.

N1 - Funding Information: This manuscript is part of the special issue of selected papers from the 6th edition of biennial International Conference on Nanoscience and Nanotechnology (ICONN-2021). Ganesha Krishna V S is thankful to DST India for providing INSPIRE fellowship through grant number IF190268. Publisher Copyright: © 2021, The Author(s).

PY - 2022/4

Y1 - 2022/4

N2 - In this work, spray-deposited Mg0.02Zn0.98Se thin films were characterized to determine their structural, optical, and electrical properties. The optical band gap of Mg-doped ZnSe thin film was observed to be around 3.05 eV, with high optical transmittance of about 50–70% in the visible region. The crystallite size of Mg-doped ZnSe thin film was about 8 nm, as observed from the X-ray diffraction (XRD) pattern. Elemental composition of Mg-doped ZnSe thin film was confirmed from X-ray energy-dispersive analysis (EDAS). Raman study showed the development of minor strain in ZnSe system due to the incorporation of Mg. The resistivity of the Mg-doped ZnSe film was about 3.82 ohm-m with a carrier concentration of 8.2 × 1011 cm− 3. Mg0.02Zn0.98Se thin films exhibited promising opto-electronic properties such as high transparency and conductivity that are essential for a solar buffer layer that could replace relatively toxic CdS layer.

AB - In this work, spray-deposited Mg0.02Zn0.98Se thin films were characterized to determine their structural, optical, and electrical properties. The optical band gap of Mg-doped ZnSe thin film was observed to be around 3.05 eV, with high optical transmittance of about 50–70% in the visible region. The crystallite size of Mg-doped ZnSe thin film was about 8 nm, as observed from the X-ray diffraction (XRD) pattern. Elemental composition of Mg-doped ZnSe thin film was confirmed from X-ray energy-dispersive analysis (EDAS). Raman study showed the development of minor strain in ZnSe system due to the incorporation of Mg. The resistivity of the Mg-doped ZnSe film was about 3.82 ohm-m with a carrier concentration of 8.2 × 1011 cm− 3. Mg0.02Zn0.98Se thin films exhibited promising opto-electronic properties such as high transparency and conductivity that are essential for a solar buffer layer that could replace relatively toxic CdS layer.

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JO - Journal of Materials Science: Materials in Electronics

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IS - 11

ER -

Structural, optical, and electrical characterization of spray-deposited Mg_0.02Zn_0.98Se thin film for buffer layer application

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