TY - JOUR
T1 - Structural optimization of indium oxide thin film for gamma dosimetry applications
AU - C, Aparna
AU - Shetty, Pramoda Kumara
AU - M G, Mahesha
N1 - Funding Information:
The authors would like to acknowledge CIF MAHE Manipal, India; CSIF BITS PILANI K Birla Goa Campus, India; DST PURSE Laboratory, Mangalore University, Mangalagangothri, India for extending characterization facilities. The authors also acknowledge the support received from the Department of Physics, Manipal Academy of Higher Education (MAHE) for providing the scholarship for research work and instrumentation facilities. Ms. Aparna would like to thank Ganesh Krishna V.S., Research scholar, MIT Manipal, for the help received in conducting the experiment.
Funding Information:
The authors would like to acknowledge CIF MAHE Manipal, India; CSIF BITS PILANI K Birla Goa Campus, India; DST PURSE Laboratory, Mangalore University, Mangalagangothri, India for extending characterization facilities. The authors also acknowledge the support received from the Department of Physics, Manipal Academy of Higher Education (MAHE) for providing the scholarship for research work and instrumentation facilities. Ms. Aparna would like to thank Ganesh Krishna V.S. Research scholar, MIT Manipal, for the help received in conducting the experiment.
Publisher Copyright:
© 2022 Elsevier Ltd
PY - 2022/11/1
Y1 - 2022/11/1
N2 - Structural optimization of Indium oxide (INO) thin films was carried out with different deposition parameters for gamma sensing applications. Indium oxide films had been deposited on glass substrates by spray pyrolysis technique for three different concentrations of precursor solution and two different substrate temperatures. XRD spectra confirm the polycrystallinity and cubic structure of INO with a dependency of preferred orientation on both substrate temperature and thickness of the thin film. Raman analysis was done to study the structural information and to obtain the phonon modes present in the thin films. Phonon modes corresponding to cubic In2O3 were detected in Raman spectra. The morphological study revealed the change of grain shape with the preferred orientation. EDAX spectra validate the presence of Indium and Oxygen in the film. 0.1 M sample deposited at 4500C showed higher transmittance of about 75%. Direct and indirect bandgap energy were estimated for which it increased with an increment in substrate temperature and also decreased with an increment in molar concentration. Urbach energy shows an inverse relation with bandgap energy. PL spectra exhibit blue emissions implying the presence of oxygen vacancies or lattice defects along with Near band edge (NBE) emission. The presence of In and O was quantified, and chemical states were identified using XPS measurements. Electrical measurements ensure the good conductivity of prepared films. Thermoluminescence studies were carried out to confirm the suitability of the prepared film for dosimetry applications.
AB - Structural optimization of Indium oxide (INO) thin films was carried out with different deposition parameters for gamma sensing applications. Indium oxide films had been deposited on glass substrates by spray pyrolysis technique for three different concentrations of precursor solution and two different substrate temperatures. XRD spectra confirm the polycrystallinity and cubic structure of INO with a dependency of preferred orientation on both substrate temperature and thickness of the thin film. Raman analysis was done to study the structural information and to obtain the phonon modes present in the thin films. Phonon modes corresponding to cubic In2O3 were detected in Raman spectra. The morphological study revealed the change of grain shape with the preferred orientation. EDAX spectra validate the presence of Indium and Oxygen in the film. 0.1 M sample deposited at 4500C showed higher transmittance of about 75%. Direct and indirect bandgap energy were estimated for which it increased with an increment in substrate temperature and also decreased with an increment in molar concentration. Urbach energy shows an inverse relation with bandgap energy. PL spectra exhibit blue emissions implying the presence of oxygen vacancies or lattice defects along with Near band edge (NBE) emission. The presence of In and O was quantified, and chemical states were identified using XPS measurements. Electrical measurements ensure the good conductivity of prepared films. Thermoluminescence studies were carried out to confirm the suitability of the prepared film for dosimetry applications.
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U2 - 10.1016/j.mssp.2022.106931
DO - 10.1016/j.mssp.2022.106931
M3 - Article
AN - SCOPUS:85133435618
SN - 1369-8001
VL - 150
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
M1 - 106931
ER -