Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

Gowrish K. Rao; Kasturi V. Bangera; G. K. Shivakumar

doi:10.1016/j.sse.2010.12.004

Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

Gowrish K. Rao, Kasturi V. Bangera, G. K. Shivakumar

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16 Citations (SciVal)

Abstract

The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model.

Original language	English
Pages (from-to)	100-103
Number of pages	4
Journal	Solid-State Electronics
Volume	56
Issue number	1
DOIs	https://doi.org/10.1016/j.sse.2010.12.004
Publication status	Published - 01-02-2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2010.12.004

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abstract = "The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model.",

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AB - The present paper reports the fabrication and detailed electrical characterization of p-ZnTe/n-CdTe heterojunction diodes prepared by vacuum deposition method. The possible conduction mechanisms of the heterojunction diode were determined by analyzing the I-V characteristics. The C-V characteristics of the heterojunction diodes were studied to determine the barrier height, carrier concentration and thickness of the depletion region in the heterojunction. A theoretical band diagram of the heterojunction was drawn based on Anderson's model.

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Studies on vacuum deposited p-ZnTe/n-CdTe heterojunction diodes

Abstract

All Science Journal Classification (ASJC) codes

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