INIS
substrates
100%
plastics
100%
oxides
100%
graphene
100%
voltage
66%
solutions
33%
cost
22%
positron computed tomography
22%
traps
22%
performance
11%
oxygen
11%
electrochemistry
11%
distribution
11%
charges
11%
retention
11%
availability
11%
processing
11%
volatility
11%
temperature range 0273-0400 k
11%
electrodes
11%
configuration
11%
vacancies
11%
memory devices
11%
Material Science
Reduced Graphene Oxide
100%
Plastics
100%
Indium Tin Oxide
100%
Solution
16%
Temperature
5%
Devices
5%
Electrode
5%
Vacancy
5%
Electronics
5%
Engineering
Sandwich Structures
100%
Giving Rise
5%
Current Flow
5%
Conductive Path
5%
High Resistance
5%
Flexible Electronics
5%
Processing Cost
5%
Retention Time
5%
Nonvolatile Memory
5%
High Resistance State
5%
Exfoliation
5%