TY - JOUR
T1 - Surface modification induced photoluminescence enhancement of GaN nanowall network grown on c-sapphire
AU - Thakur, Varun
AU - Nayak, Sanjay Kumar
AU - Nagaraja, Kodihalli Keeriti
AU - Shivaprasad, Sonnada Math
PY - 2015/5/30
Y1 - 2015/5/30
N2 - Surface nitridation of the c-sapphire substrate is used to improve the optical and structural quality of a GaN nanowall network film grown by plasma assisted molecular beam epitaxy. The nitridation results in the formation of a thin AlN layer on the sapphire surface. Several in-situ and ex-situ characterization are complementarily used to probe the changes in epitaxial growth, band edge emission and strain in the films. The GaN nanowall network layer formed on the pre-nitrided substrate shows a two order higher intensity of band edge luminescence than that of a GaN epilayer, demonstrating its potential for light-emission applications.
AB - Surface nitridation of the c-sapphire substrate is used to improve the optical and structural quality of a GaN nanowall network film grown by plasma assisted molecular beam epitaxy. The nitridation results in the formation of a thin AlN layer on the sapphire surface. Several in-situ and ex-situ characterization are complementarily used to probe the changes in epitaxial growth, band edge emission and strain in the films. The GaN nanowall network layer formed on the pre-nitrided substrate shows a two order higher intensity of band edge luminescence than that of a GaN epilayer, demonstrating its potential for light-emission applications.
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U2 - 10.1007/s13391-015-4388-3
DO - 10.1007/s13391-015-4388-3
M3 - Article
AN - SCOPUS:84930644550
SN - 1738-8090
VL - 11
SP - 398
EP - 403
JO - Electronic Materials Letters
JF - Electronic Materials Letters
IS - 3
ER -