Temperature dependent transport properties of CuInSe2-ZnO heterostructure solar Cell

Dhananjaya Dhananjay; J. Nagaraju; S. B. Krupanidhi

doi:10.1016/j.jpcs.2006.02.012

Temperature dependent transport properties of CuInSe₂-ZnO heterostructure solar Cell

Dhananjay
, J. Nagaraju
, S. B. Krupanidhi

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Experimental study of dc and ac transport properties of CuInSe₂/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe₂/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C^-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.

Original language	English
Pages (from-to)	1636-1642
Number of pages	7
Journal	Journal of Physics and Chemistry of Solids
Volume	67
Issue number	8
DOIs	https://doi.org/10.1016/j.jpcs.2006.02.012
Publication status	Published - 01-08-2006

All Science Journal Classification (ASJC) codes

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.jpcs.2006.02.012

Cite this

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title = "Temperature dependent transport properties of CuInSe2-ZnO heterostructure solar Cell",

abstract = "Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.",

author = "Dhananjay and J. Nagaraju and Krupanidhi, \{S. B.\}",

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AU - Dhananjay, null

AU - Nagaraju, J.

AU - Krupanidhi, S. B.

PY - 2006/8/1

Y1 - 2006/8/1

N2 - Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.

AB - Experimental study of dc and ac transport properties of CuInSe2/ZnO heterostructure is presented. The current-voltage (I-V) and frequency dependent capacitance (C-f) characteristics of CuInSe2/ZnO heterostructure were investigated in the temperature range 160-393 K. The heterostructure showed non-ideal behavior of I-V characteristics with an ideality factor of 3.0 at room temperature. Temperature dependent dc conductivity studies exhibited Arrhenius type behavior and revealed the presence of trap level. The C-2-V plot measured at frequency 50 kHz had shown non-linear behavior. An increase in capacitance with temperature was observed. The capacitance-frequency characteristics exhibited a transition between low frequency and the high frequency capacitance. As the temperature was lowered the transition occurred at lower frequencies. The frequency and temperature dependent device capacitance had shown a defect state having activation energy of 108 meV.

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JO - Journal of Physics and Chemistry of Solids

JF - Journal of Physics and Chemistry of Solids

IS - 8

ER -

Temperature dependent transport properties of CuInSe₂-ZnO heterostructure solar Cell

Abstract

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