The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing

Atanu Das; Arif Khan

doi:10.1515/zna-2007-10-1108

The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing

Atanu Das
, Arif Khan^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

Original language	English
Pages (from-to)	605-608
Number of pages	4
Journal	Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences
Volume	62
Issue number	10-11
DOIs	https://doi.org/10.1515/zna-2007-10-1108
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Mathematical Physics
General Physics and Astronomy
Physical and Theoretical Chemistry

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10.1515/zna-2007-10-1108

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title = "The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing",

abstract = "A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.",

author = "Atanu Das and Arif Khan",

year = "2007",

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AU - Khan, Arif

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AB - A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

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DO - 10.1515/zna-2007-10-1108

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IS - 10-11

ER -

The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing

Abstract

All Science Journal Classification (ASJC) codes

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