The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing

Atanu Das; Arif Khan

doi:10.1515/zna-2007-10-1108

The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing

Atanu Das
, Arif Khan^*

^*Corresponding author for this work

Department of Electronics and Communication Engineering, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

Original language	English
Pages (from-to)	605-608
Number of pages	4
Journal	Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences
Volume	62
Issue number	10-11
DOIs	https://doi.org/10.1515/zna-2007-10-1108
Publication status	Published - 2007

All Science Journal Classification (ASJC) codes

Mathematical Physics
General Physics and Astronomy
Physical and Theoretical Chemistry

Access to Document

10.1515/zna-2007-10-1108

Cite this

@article{1204df6c0d4840da97b374be58c2ebb4,

title = "The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing",

abstract = "A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.",

author = "Atanu Das and Arif Khan",

year = "2007",

doi = "10.1515/zna-2007-10-1108",

language = "English",

volume = "62",

pages = "605--608",

journal = "Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences",

issn = "0932-0784",

publisher = "Walter de Gruyter GmbH",

number = "10-11",

}

TY - JOUR

T1 - The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing

AU - Das, Atanu

AU - Khan, Arif

PY - 2007

Y1 - 2007

N2 - A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

AB - A relationship between the mobility and diffusivity of semiconductors exhibiting bandgap narrowing has been presented. The relationship is general and applicable to both non-degenerate and degenerate semiconductors under an applied bias. It is suitable for the investigation of the electrical transport in heavily doped semiconductors.

UR - https://www.scopus.com/pages/publications/39049110672

UR - https://www.scopus.com/pages/publications/39049110672#tab=citedBy

U2 - 10.1515/zna-2007-10-1108

DO - 10.1515/zna-2007-10-1108

M3 - Article

AN - SCOPUS:39049110672

SN - 0932-0784

VL - 62

SP - 605

EP - 608

JO - Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences

JF - Zeitschrift fur Naturforschung - Section A Journal of Physical Sciences

IS - 10-11

ER -

The diffusivity-mobility relationship of heavily doped semiconductors exhibiting a non-parabolic band structure and bandgap narrowing

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this