The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films

K. Priya; Gowrish K. Rao; V. K. Ashith; Ganesh Sanjeev; Vijay Pal Verma; Vikash Chandra Petwal; Jishnu Dwivedi

doi:10.1016/j.ceramint.2018.10.188

The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films

K. Priya, Gowrish K. Rao, V. K. Ashith, Ganesh Sanjeev, Vijay Pal Verma, Vikash Chandra Petwal, Jishnu Dwivedi

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The thermal deposited ZnS thin films with thickness ranging from 400 nm to 1000 nm were irradiated with various doses of 8 MeV electrons. The structural, optical and photoluminescence properties of the irradiated films were studied in detail. The films with thickness ranging from 600 nm to 650 nm were found to have highest tolerance to irradiation. The crystallite size of these films increased after irradiation. The irradiated films were also found to have high absorption in the UV region and their bandgap showed only marginal variation of 2.57%. The photoluminescence spectra of the films were unaffected by irradiation, confirming the stability of their energy band structure. Thus, the thermal deposited ZnS films were found to be highly suitable for UV photo-detection in the radiation environment.

Original language	English
Pages (from-to)	2576-2583
Number of pages	8
Journal	Ceramics International
Volume	45
Issue number	2
DOIs	https://doi.org/10.1016/j.ceramint.2018.10.188
Publication status	Published - 01-02-2019

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Process Chemistry and Technology
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.ceramint.2018.10.188

Cite this

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title = "The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films",

abstract = "The thermal deposited ZnS thin films with thickness ranging from 400 nm to 1000 nm were irradiated with various doses of 8 MeV electrons. The structural, optical and photoluminescence properties of the irradiated films were studied in detail. The films with thickness ranging from 600 nm to 650 nm were found to have highest tolerance to irradiation. The crystallite size of these films increased after irradiation. The irradiated films were also found to have high absorption in the UV region and their bandgap showed only marginal variation of 2.57%. The photoluminescence spectra of the films were unaffected by irradiation, confirming the stability of their energy band structure. Thus, the thermal deposited ZnS films were found to be highly suitable for UV photo-detection in the radiation environment.",

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T1 - The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films

AU - Priya, K.

AU - Rao, Gowrish K.

AU - Ashith, V. K.

AU - Sanjeev, Ganesh

AU - Verma, Vijay Pal

AU - Petwal, Vikash Chandra

AU - Dwivedi, Jishnu

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N2 - The thermal deposited ZnS thin films with thickness ranging from 400 nm to 1000 nm were irradiated with various doses of 8 MeV electrons. The structural, optical and photoluminescence properties of the irradiated films were studied in detail. The films with thickness ranging from 600 nm to 650 nm were found to have highest tolerance to irradiation. The crystallite size of these films increased after irradiation. The irradiated films were also found to have high absorption in the UV region and their bandgap showed only marginal variation of 2.57%. The photoluminescence spectra of the films were unaffected by irradiation, confirming the stability of their energy band structure. Thus, the thermal deposited ZnS films were found to be highly suitable for UV photo-detection in the radiation environment.

AB - The thermal deposited ZnS thin films with thickness ranging from 400 nm to 1000 nm were irradiated with various doses of 8 MeV electrons. The structural, optical and photoluminescence properties of the irradiated films were studied in detail. The films with thickness ranging from 600 nm to 650 nm were found to have highest tolerance to irradiation. The crystallite size of these films increased after irradiation. The irradiated films were also found to have high absorption in the UV region and their bandgap showed only marginal variation of 2.57%. The photoluminescence spectra of the films were unaffected by irradiation, confirming the stability of their energy band structure. Thus, the thermal deposited ZnS films were found to be highly suitable for UV photo-detection in the radiation environment.

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The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films

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The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films

Abstract

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The effect of 8 MeV electron beam irradiation on the structural, optical and photoluminescence properties of ZnS thin films