The fabrication and characterization of thermal evaporated n-ZnS/p-Si heterojunction and ZnS-Au Schottky photodiodes

K. Priya; Gowrish K. Rao; Ganesh Sanjeev

doi:10.1016/j.optlastec.2022.108657

The fabrication and characterization of thermal evaporated n-ZnS/p-Si heterojunction and ZnS-Au Schottky photodiodes

K. Priya, Gowrish K. Rao^*, Ganesh Sanjeev

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

The wide bandgap of zinc sulfide (ZnS) is optimum for the detection of UV wavelengths. In the research work presented here, thermal evaporated ZnS layer is paired with Si and Au to form heterojunction and Schottky photodiodes. The devices showed UV detection capabilities. The barrier height of the n-ZnS/p-Si heterojunction varied from 0.06 to 0.1 eV when the ambient temperature was increased up to 420 K. The series resistance and ideality factors varied from 20 to 130 kΩ and 2–3 respectively. The built-in potential was about 0.76 V. The heterojunction showed a responsivity of 0.08 A/W and quantum efficiency of 0.3. The Au/ZnS Schottky junction was found to have an ideality factor of 2.53 with a barrier height of 0.46 eV. The response times of both the devices were found to be almost similar but it was much faster than that of the isolated ZnS film. This is due to the faster movement of photogenerated charges in the electric field of the junction.

Original language	English
Article number	108657
Journal	Optics and Laser Technology
Volume	157
DOIs	https://doi.org/10.1016/j.optlastec.2022.108657
Publication status	Published - 01-2023

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1016/j.optlastec.2022.108657

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title = "The fabrication and characterization of thermal evaporated n-ZnS/p-Si heterojunction and ZnS-Au Schottky photodiodes",

abstract = "The wide bandgap of zinc sulfide (ZnS) is optimum for the detection of UV wavelengths. In the research work presented here, thermal evaporated ZnS layer is paired with Si and Au to form heterojunction and Schottky photodiodes. The devices showed UV detection capabilities. The barrier height of the n-ZnS/p-Si heterojunction varied from 0.06 to 0.1 eV when the ambient temperature was increased up to 420 K. The series resistance and ideality factors varied from 20 to 130 kΩ and 2–3 respectively. The built-in potential was about 0.76 V. The heterojunction showed a responsivity of 0.08 A/W and quantum efficiency of 0.3. The Au/ZnS Schottky junction was found to have an ideality factor of 2.53 with a barrier height of 0.46 eV. The response times of both the devices were found to be almost similar but it was much faster than that of the isolated ZnS film. This is due to the faster movement of photogenerated charges in the electric field of the junction.",

author = "K. Priya and Rao, {Gowrish K.} and Ganesh Sanjeev",

note = "Funding Information: The authors are thankful to DAE-BRNS (Govt. of India) for funding the above research work (Sanction No.: 34(1)/14/37/2014). The authors are also thankful to Manipal Institute of Technology, MAHE, Manipal and DST PURSE Lab, Mangalore University Funding Information: The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Gowrish Rao K reports financial support was provided by Board of Research in Nuclear Sciences. Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd",

year = "2023",

month = jan,

doi = "10.1016/j.optlastec.2022.108657",

language = "English",

volume = "157",

journal = "Optics and Laser Technology",

issn = "0030-3992",

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T1 - The fabrication and characterization of thermal evaporated n-ZnS/p-Si heterojunction and ZnS-Au Schottky photodiodes

AU - Priya, K.

AU - Rao, Gowrish K.

AU - Sanjeev, Ganesh

N1 - Funding Information: The authors are thankful to DAE-BRNS (Govt. of India) for funding the above research work (Sanction No.: 34(1)/14/37/2014). The authors are also thankful to Manipal Institute of Technology, MAHE, Manipal and DST PURSE Lab, Mangalore University Funding Information: The authors declare the following financial interests/personal relationships which may be considered as potential competing interests: Gowrish Rao K reports financial support was provided by Board of Research in Nuclear Sciences. Publisher Copyright: © 2022 Elsevier Ltd

PY - 2023/1

Y1 - 2023/1

N2 - The wide bandgap of zinc sulfide (ZnS) is optimum for the detection of UV wavelengths. In the research work presented here, thermal evaporated ZnS layer is paired with Si and Au to form heterojunction and Schottky photodiodes. The devices showed UV detection capabilities. The barrier height of the n-ZnS/p-Si heterojunction varied from 0.06 to 0.1 eV when the ambient temperature was increased up to 420 K. The series resistance and ideality factors varied from 20 to 130 kΩ and 2–3 respectively. The built-in potential was about 0.76 V. The heterojunction showed a responsivity of 0.08 A/W and quantum efficiency of 0.3. The Au/ZnS Schottky junction was found to have an ideality factor of 2.53 with a barrier height of 0.46 eV. The response times of both the devices were found to be almost similar but it was much faster than that of the isolated ZnS film. This is due to the faster movement of photogenerated charges in the electric field of the junction.

AB - The wide bandgap of zinc sulfide (ZnS) is optimum for the detection of UV wavelengths. In the research work presented here, thermal evaporated ZnS layer is paired with Si and Au to form heterojunction and Schottky photodiodes. The devices showed UV detection capabilities. The barrier height of the n-ZnS/p-Si heterojunction varied from 0.06 to 0.1 eV when the ambient temperature was increased up to 420 K. The series resistance and ideality factors varied from 20 to 130 kΩ and 2–3 respectively. The built-in potential was about 0.76 V. The heterojunction showed a responsivity of 0.08 A/W and quantum efficiency of 0.3. The Au/ZnS Schottky junction was found to have an ideality factor of 2.53 with a barrier height of 0.46 eV. The response times of both the devices were found to be almost similar but it was much faster than that of the isolated ZnS film. This is due to the faster movement of photogenerated charges in the electric field of the junction.

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The fabrication and characterization of thermal evaporated n-ZnS/p-Si heterojunction and ZnS-Au Schottky photodiodes

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