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Theoretical Analysis of Dielectric Assisted Tamm Mode Excitation

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    In this paper, a dielectric material assisted excitation mechanism is proposed to confine Tamm Modes at the dielectric-air interface. The performance analysis of proposed structure is performed using transfer matrix method (TMM). The design comprises a bilayer one-dimensional photonic crystal structure having a top defect layer. The defect layer thickness, and incident angles are optimized to confirm the Tamm mode confinement at an operating wavelength of 632.8nm. The proposed structure shows a strong Tamm mode localization for a defect layer thickness of 210nm. Whereas an evanescent Tamm mode is also excited for a lower defect layer thickness of around 170nm.

    Original languageEnglish
    Title of host publication2022 IEEE 22nd International Conference on Nanotechnology, NANO 2022
    PublisherIEEE Computer Society
    Pages257-260
    Number of pages4
    ISBN (Electronic)9781665452250
    DOIs
    Publication statusPublished - 2022
    Event22nd IEEE International Conference on Nanotechnology, NANO 2022 - Palma de Mallorca, Spain
    Duration: 04-07-202208-07-2022

    Publication series

    NameProceedings of the IEEE Conference on Nanotechnology
    Volume2022-July
    ISSN (Print)1944-9399
    ISSN (Electronic)1944-9380

    Conference

    Conference22nd IEEE International Conference on Nanotechnology, NANO 2022
    Country/TerritorySpain
    CityPalma de Mallorca
    Period04-07-2208-07-22

    All Science Journal Classification (ASJC) codes

    • Bioengineering
    • Electrical and Electronic Engineering
    • Materials Chemistry
    • Condensed Matter Physics

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