Thermal characterisation of doped InP using photoacoustic technique

Sajan D. George; Achamma Kurian; Martin Lase; V. P.N. Nampoori; C. P.G. Vallabhan

doi:10.1117/12.446608

Thermal characterisation of doped InP using photoacoustic technique

Sajan D. George, Achamma Kurian, Martin Lase, V. P.N. Nampoori, C. P.G. Vallabhan

Research output: Contribution to journal › Article › peer-review

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Abstract

An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with suplhur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.

Original language	English
Pages (from-to)	183-191
Number of pages	9
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	4595
DOIs	https://doi.org/10.1117/12.446608
Publication status	Published - 01-12-2001

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.446608

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abstract = "An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with suplhur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.",

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AU - George, Sajan D.

AU - Kurian, Achamma

AU - Lase, Martin

AU - Nampoori, V. P.N.

AU - Vallabhan, C. P.G.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with suplhur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.

AB - An open cell photoacoustic configuration has been employed to evaluate the thermal diffusivity of pure InP as well as InP doped with suplhur and iron. Chopped optical radiation at 488 nm from an Ar-ion laser has been used to excite photoacoustic signals which been detected by a sensitive electret microphone. Thermal diffusivity value have been calculated from phase versus chopping frequency plots. Doped sample are found to show a reduced value for thermal diffusivity in comparison with intrinsically pure sample. The results have been interpreted in terms of the mechanisms of heat generation and transmission in semiconductors.

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Thermal characterisation of doped InP using photoacoustic technique

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