TY - JOUR
T1 - Thermoelectric Composite of (Bi0.98In0.02)2Te2.7Se0.3/Bi2Se3 with Enhanced Thermopower and Reduced Electrical Resistivity
AU - Hegde, Ganesh Shridhar
AU - Prabhu, A. N.
AU - Putran, Suchitra
AU - Rao, Ashok
AU - Gurukrishna, K.
AU - Shanubhogue, U. Deepika
N1 - Funding Information:
Open access funding provided by Manipal Academy of Higher Education, Manipal. The research leading to these results received funding from project grant UDCSR/MUM/AO/CRS-M-314/2021/298, Dr. T. M. A.’s PhD scholarship and DST-FIST Grant (SR/FIST/PS-1/2017/8).
Funding Information:
Ganesh Shridhar Hegde (GSH) would like to thank the Manipal Academy of Higher Education for helping to support Dr. T. M. A.'s PhD scholarship. ANP thanks UGC-DAE, Mumbai, for providing financial support in accordance with the provisions of the project grant UDCSR/MUM/AO/CRS-M-314/2021/298. One of the authors (AR) received the money required to finish this investigation from the DST-FIST Grant (SR/FIST/PS-1/2017/8).
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/6
Y1 - 2023/6
N2 - By using the solid-state reaction approach, composite polycrystalline samples of (Bi0.98In0.02)2Te2.7Se0.3/x%Bi2Se3 were created with varying amounts of Bi2Se3, (x = 5%, 10%, 15%, and 20%). The hexagonal crystal structure of the composite was revealed by x-ray diffraction (XRD) with a space group of R3 ¯ m. The surface of the samples was seen to have secondary particles using a field emission scanning electronic microscope. Every sample displayed the typical semi-conducting behaviour across the entire temperature range. In the complex (Bi0.98In0.02)2Te2.7Se0.3, it was found that bismuth was coordinated with six selenium atoms and there were significant selenium vacancies. With an increase in bismuth selenide concentration, the dissolution pattern shifted to a substitutional pattern. A two fold decrease in electrical resistivity for (Bi0.98In0.02)2Te2.7Se0.3/20%Bi2Se3 composition was seen compared to (Bi0.98In0.02)2Te2.7Se0.3/5%Bi2Se3. The granular material was produced by sintering and scattering of potential barrier, a thermal process that increases the Seebeck coefficient. A 200% increase was observed in thermopower for (Bi0.98In0.02)2Te2.7Se0.3/20%Bi2Se3 compared to (Bi0.98In0.02)2Te2.7Se0.3/5%Bi2Se3 compound. Graphical Abstract: [Figure not available: see fulltext.]
AB - By using the solid-state reaction approach, composite polycrystalline samples of (Bi0.98In0.02)2Te2.7Se0.3/x%Bi2Se3 were created with varying amounts of Bi2Se3, (x = 5%, 10%, 15%, and 20%). The hexagonal crystal structure of the composite was revealed by x-ray diffraction (XRD) with a space group of R3 ¯ m. The surface of the samples was seen to have secondary particles using a field emission scanning electronic microscope. Every sample displayed the typical semi-conducting behaviour across the entire temperature range. In the complex (Bi0.98In0.02)2Te2.7Se0.3, it was found that bismuth was coordinated with six selenium atoms and there were significant selenium vacancies. With an increase in bismuth selenide concentration, the dissolution pattern shifted to a substitutional pattern. A two fold decrease in electrical resistivity for (Bi0.98In0.02)2Te2.7Se0.3/20%Bi2Se3 composition was seen compared to (Bi0.98In0.02)2Te2.7Se0.3/5%Bi2Se3. The granular material was produced by sintering and scattering of potential barrier, a thermal process that increases the Seebeck coefficient. A 200% increase was observed in thermopower for (Bi0.98In0.02)2Te2.7Se0.3/20%Bi2Se3 compared to (Bi0.98In0.02)2Te2.7Se0.3/5%Bi2Se3 compound. Graphical Abstract: [Figure not available: see fulltext.]
UR - https://www.scopus.com/pages/publications/85150501123
UR - https://www.scopus.com/inward/citedby.url?scp=85150501123&partnerID=8YFLogxK
U2 - 10.1007/s11664-023-10346-5
DO - 10.1007/s11664-023-10346-5
M3 - Article
AN - SCOPUS:85150501123
SN - 0361-5235
VL - 52
SP - 3749
EP - 3758
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 6
ER -