Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation

Indudhar Panduranga Vali, Pramoda Kumara Shetty, M. G. Mahesha, V. C. Petwal, Jishnu Dwivedi, R. J. Choudhary

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The effect of electron beam irradiation (EBI) on Al/n-Si Schottky diode has been studied by I–V characterization at room temperature. The behavior of the metal-semiconductor (MS) interface is analyzed by means of variations in the MS contact parameters such as, Schottky barrier height (ΦB), ideality factor (n) and series resistance (Rs). These parameters were found to depend on the EBI dose having a fixed incident beam of energy 7.5 MeV. At different doses (500, 1000, 1500 kGy) of EBI, the Schottky contacts were prepared and extracted their contact parameters by applying thermionic emission and Cheung models. Remarkably, the tuning of ΦB was observed as a function of EBI dose. The improved n with increased ΦB is seen for all the EBI doses. As a consequence of which the thermionic emission is more favored. However, the competing transport mechanisms such as space charge limited emission, tunneling and tunneling through the trap states were ascribed due to n > 1. The analysis of XPS spectra have shown the presence of native oxide and increased radiation induced defect states. The thickness variation in the MS interface contributing to Schottky contact behavior is discussed. This study explains a new technique to tune Schottky contact parameters by metal deposition on the electron beam irradiated n-Si wafers.

Original languageEnglish
Pages (from-to)171-176
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 15-06-2017

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films


Dive into the research topics of 'Tuning of Schottky barrier height of Al/n-Si by electron beam irradiation'. Together they form a unique fingerprint.

Cite this