Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter

Shiau Shin Cheng; Jia Hao Chen; Guan Yuan Chen; Dhananjay Kekuda; Meng Chyi Wu; Chih Wei Chu

doi:10.1016/j.orgel.2009.08.023

Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter

Shiau Shin Cheng, Jia Hao Chen, Guan Yuan Chen, Dhananjay Kekuda, Meng Chyi Wu, Chih Wei Chu^*

^*Corresponding author for this work

Department of Physics, Manipal Institute of Technology, Manipal

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO₃) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO₃/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at V_B = -5 V and a current ON/OFF ratio of 10³. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.

Original language	English
Pages (from-to)	1636-1640
Number of pages	5
Journal	Organic Electronics: physics, materials, applications
Volume	10
Issue number	8
DOIs	https://doi.org/10.1016/j.orgel.2009.08.023
Publication status	Published - 01-12-2009

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Biomaterials
General Chemistry
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/j.orgel.2009.08.023

Cite this

@article{0a85cbb133134f599202a8af7bdc977a,

title = "Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter",

abstract = "In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at VB = -5 V and a current ON/OFF ratio of 103. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.",

author = "Cheng, {Shiau Shin} and Chen, {Jia Hao} and Chen, {Guan Yuan} and Dhananjay Kekuda and Wu, {Meng Chyi} and Chu, {Chih Wei}",

year = "2009",

month = dec,

day = "1",

doi = "10.1016/j.orgel.2009.08.023",

language = "English",

volume = "10",

pages = "1636--1640",

journal = "Organic Electronics: physics, materials, applications",

issn = "1566-1199",

publisher = "Elsevier B.V.",

number = "8",

}

TY - JOUR

T1 - Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter

AU - Cheng, Shiau Shin

AU - Chen, Jia Hao

AU - Chen, Guan Yuan

AU - Kekuda, Dhananjay

AU - Wu, Meng Chyi

AU - Chu, Chih Wei

PY - 2009/12/1

Y1 - 2009/12/1

N2 - In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at VB = -5 V and a current ON/OFF ratio of 103. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.

AB - In this study, we investigated the influence of a buffer layer of molybdic oxide (MoO3) at the metal/organic junction on the behavior of organic base-modulation triodes. The performance of devices featuring MoO3/Al as the emitter electrode was enhanced relative to that of corresponding devices with Au and Ag, presumably because of the reduced in the contact barrier and the prevention of metal diffusion into the organic layer. The device exhibited an output current of -16.1 μA at VB = -5 V and a current ON/OFF ratio of 103. Using this architecture, we constructed resistance-load inverters that exhibited a calculated gain of 6.

UR - http://www.scopus.com/inward/record.url?scp=71849087761&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=71849087761&partnerID=8YFLogxK

U2 - 10.1016/j.orgel.2009.08.023

DO - 10.1016/j.orgel.2009.08.023

M3 - Article

AN - SCOPUS:71849087761

SN - 1566-1199

VL - 10

SP - 1636

EP - 1640

JO - Organic Electronics: physics, materials, applications

JF - Organic Electronics: physics, materials, applications

IS - 8

ER -

Using metal/organic junction engineering to prepare an efficient organic base-modulation triode and its inverter

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this