TY - GEN
T1 - Voltage-Gated Spin-Orbit Torque Magnetic Tunnel Junction model analysis
AU - Alla, Srija
AU - Joshi, Vinod Kumar
AU - Bhat, Somashekara
N1 - Funding Information:
ACKNOWLEDGMENT Srija Alla would like to extend thanks to the Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, for offering laboratory resources and TMA Pai scholarship to continue her research work. She would also extend her special thanks to Dr. Kaili Zhang, school of integrated circult science and engineering, Beihang University for providing the VGSOT model library.
Funding Information:
Srija Alla would like to extend thanks to the Manipal Institute of Technology, Manipal Academy of Higher Education, Manipal, for offering laboratory resources and TMA Pai scholarship to continue her research work. She would also extend her special thanks to Dr. Kaili Zhang, school of integrated circult science and engineering, Beihang University for providing the VGSOT model library.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The voltage-gated spin-orbit torque (VGSOT) field-free switching mechanism provides the combined benefit of voltage-control of magnetic anisotropy (VCMA), spin-orbit torque (SOT), and the effect of exchange bias produced by the anti-ferromagnetic electrode simultaneously paving the way for the development of a realistic, ultra-low-power next-generation MRAM. This paper presents a detailed analysis of VCMA-assisted SOT writing properties on the free layer of the perpendicular magnetic tunnel junction (pMTJ) device. The magnetization reversal process caused by SOT is observed to be dependent on the pulse duration, and the voltage applied at the corresponding terminal. Further, the impact of terminal voltages and pulse width to induce SOT and VCMA effect on switching delay is analyzed. We also investigated the exchange bias effect on free layer thickness and switching delay along with the antiparallel (AP) and parallel (P) resistance of the model. Finally, the influence of gate voltage on SOT switching characteristics is investigated.
AB - The voltage-gated spin-orbit torque (VGSOT) field-free switching mechanism provides the combined benefit of voltage-control of magnetic anisotropy (VCMA), spin-orbit torque (SOT), and the effect of exchange bias produced by the anti-ferromagnetic electrode simultaneously paving the way for the development of a realistic, ultra-low-power next-generation MRAM. This paper presents a detailed analysis of VCMA-assisted SOT writing properties on the free layer of the perpendicular magnetic tunnel junction (pMTJ) device. The magnetization reversal process caused by SOT is observed to be dependent on the pulse duration, and the voltage applied at the corresponding terminal. Further, the impact of terminal voltages and pulse width to induce SOT and VCMA effect on switching delay is analyzed. We also investigated the exchange bias effect on free layer thickness and switching delay along with the antiparallel (AP) and parallel (P) resistance of the model. Finally, the influence of gate voltage on SOT switching characteristics is investigated.
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U2 - 10.1109/DISCOVER55800.2022.9974906
DO - 10.1109/DISCOVER55800.2022.9974906
M3 - Conference contribution
AN - SCOPUS:85145347894
T3 - 2022 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics, DISCOVER 2022 - Proceedings
SP - 96
EP - 101
BT - 2022 IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics, DISCOVER 2022 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th IEEE International Conference on Distributed Computing, VLSI, Electrical Circuits and Robotics, DISCOVER 2022
Y2 - 14 October 2022 through 15 October 2022
ER -